Comparison of Ferroelectric Photovoltaic Performance in BFO/BTO Multilayer Thin Film Structure Fabricated Using CSD & PLD Techniques

Studies on energy storage properties of BFO/WO3 bilayer thin film capacitor

“…By combining the multiferroic material like BFO with two or more ferroelectric materials, the problem of high leakage current can also be solved to achieve the magnificent ferromagnetism in BFO. In comparison with the individual constituent material, the resultant structure may exhibit excellent properties qualifying it to use in device application 3,6‐9 . Hence, they assist about the up gradation of BDS, as shown in the Ba 0.7 Ca 0.3 TiO 3 /BaZr 0.2 Ti 0.8 O 3 , BaSn 0.15 Ti 0.85 O 3 /Ba 0.6 Sr 0.4 TiO 3 and BiFeO 3 /0.94Bi 0.5 Na 0.5 TiO 3 −0.06BaTiO 3 multilayer thin films 10‐13 .…”

“…The ferroelectric materials like CaCuTiO 3 , PbTiO 3 and BaTiO 3 possess the outstanding dielectric permittivity are mostly utilized in energy storage purposes; nevertheless, as a consequence of their low electrical breakdown strength (BDS), these materials have low performance in energy storage devices. [5][6][7] Environment friendly Bismuth Ferrite (BFO) aroused lots of attention among the group of several materials exhibiting multiferroic property because of its outstanding magnetization (1 u B /F e ) and polarization ~100 μC/cm 2 both at room temperature and above. Owing two ferroic order of ferroelectricity (with Curie temperature T C = 1103 K) and antiferromagnetism (with Neel temperature T N = 643 K) concurrently making it suitable both for room temperature as well as high temperature applications.…”

Dy-Doped BiFeO3 thin films: piezoelectric and bandgap tuning

“…Doped and undoped BFO films have already been obtained using many different deposition routes. High quality films have been deposited by pulsed laser deposition (PLD), [24][25][26][27] but most of the time chemical solution deposition, 27,28 sputtering 29,30 and solgel processes 31,32 have been used. The metal-organic chemical vapor deposition (MOCVD) has been less investigated for the deposition of BFO films, [33][34][35][36] despite being very appealing in regard to homogeneous deposition on large substrates, easy up-scaling possibility, and a large choice of available substrates and precursors.…”

“…Doped and undoped BFO films have already been obtained using many different deposition routes. High quality films have been deposited by pulsed laser deposition (PLD), [24][25][26][27] but most of the time chemical solution deposition, 27,28 sputtering 29,30 and sol-gel processes 31,32 have been used.…”

Narrow Bandgap Inorganic Ferroelectric Thin Film Materials

“…[18][19] Currently, the mechanism of ferroelectric photovoltaic effect can be explained by four theories: i) bulk photovoltaic effect, [18] ii) domain wall theory, [17] iii) Schottky junction theory, and iv) depolarized field effect. [20] The bulk photovoltaic mechanism believes that the photogenerated voltage is generated inside the ferroelectric material, which is related to the crystal structure of the ferroelectric material with noncentrosymmetric. Ferroelectric domains exist in the ferroelectric phase of ferroelectric materials.…”