Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Katsikini, M.; Pinakidou, F.; Arvanitidis, J.; Paloura, E. C.; Ves, S.; Komninou, Ph.; Bougrioua, Z.; Iliopoulos, E.; Moustakas, T. D.

doi:10.1016/j.mseb.2011.02.028

Cited by 12 publications

(12 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14,17 At particular, it is expected to be considerable at high dopant concentrations. However, their A 1 (LO) peaks move towards the higher energy side as the Si doping concentration increases.…”

Section: Resultsmentioning

confidence: 99%

“…It should be noted that the incorporation of foreign atoms into GaN can introduce a hydrostatic strain. 14,17 At particular, it is expected to be considerable at high dopant concentrations. In the Si-doped GaN epilayers studied in the present work, no observable shi is observed for the E high 2 mode, suggesting that the residual strain shows no observable change with increasing the Si doping concentration at least in the interested range, i.e., <9 Â 10 17 cm À3 .…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that intentionally undoped GaN bulks and thin lms always show n-type conductivity. [9][10][11][12][13][14] However, a systematic study of the strain, especially evolution of the strain with the Fe doping concentration in GaN epilayers, although highly desirable, does not exist. Therefore, fabricating semi-insulating and p-type GaN materials is crucial for applying GaN in functional devices.…”

Section: Introductionmentioning

confidence: 99%

“…7 As an effective method of studying lattice vibration and its interaction with carriers, Raman spectroscopy has been adopted widely to investigate strain status in GaN epilayers including Fe-doped epilayers. [9][10][11][12][13][14] However, a systematic study of the strain, especially evolution of the strain with the Fe doping concentration in GaN epilayers, although highly desirable, does not exist. In this article, we present a detailed study on the effects of Fe doping on the strain and optical properties of the GaN epilayers when the Fe doping concentration varies from 0.013% to 4.7%.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

Zheng

Ning

et al. 2014

RSC Adv.

View full text Add to dashboard Cite

The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the backscattering geometric configuration. Careful investigation of the E high 2 and A 1 (LO) modes of the Fe-and Sidoped epilayers as well as the intentionally undoped free-standing GaN reveals that the compressive residual strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The relaxation of compressive residual strain is most likely due to compensation by the tensile strain induced by incorporation of iron atoms in the GaN epilayers. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of the A 1 (LO)-plasmon coupled mode.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

Zheng

Ning

et al. 2014

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…These low values indicate that all the silicon atoms are activated and the carrier concentration determined represents the dopant concentration [250].…”

Section: Characterization Of Gan/aln On Si (111)mentioning

confidence: 99%

Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application

Zheng¹

View full text Add to dashboard Cite

Local structural investigations and speciation of uranium in Sr2P2O7 by time resolved emission spectroscopy and Sr K-edge EXAFS

Mohapatra

Yadav

Jha

et al. 2014

Chemical Physics Letters

View full text Add to dashboard Cite

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Cited by 12 publications

References 19 publications

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application

Local structural investigations and speciation of uranium in Sr2P2O7 by time resolved emission spectroscopy and Sr K-edge EXAFS

Contact Info

Product

Resources

About