Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

“…In equations 3.1 -3.3, 𝑟 is the scattering factor of the semiconductor material, 𝑡 is sample thickness, 𝑞 is electron charge, and 𝜌 is the sample resistivity [117]. In order to obtain a high accuracy Hall measurement result, there are some conditions related to the sample and the contact points must be verified.…”

“…TLM is a method to calculate ohmic contact's resistance and specific In CTLM, the inner contact area has radius L and gap width d from the outer contact region. The total resistance between the inner and outer contacts is calculated by [117]:…”