Comparison of facet temperature and degradation of unpumped and passivated facets of Al-free 940-nm lasers using photoluminescence

Chavan, Ashonita; Radionova, R.; Charache, G.W.; Menna, R.; Schlüter, Holger; Hostetler, John L.

doi:10.1109/jqe.2005.844468

Cited by 10 publications

(5 citation statements)

References 16 publications

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“…COD schemes similar to Fig. 2 have been published by several other authors as well [9,12,14,21,26,27].…”

Section: Cod and Thermal Runawaymentioning

confidence: 91%

“…This energy transfer represents an additional source of heating, closing an extrinsic feedback loop. Reports on lowered COD thresholds in aged diode lasers [20][21][22][23] indicate the existence of this type of feedback loop. The re-ignition of the thermal runaway by subsequent current pulses [24,25] represents an indirect evidence for this behavior.…”

Section: Cod and Thermal Runawaymentioning

confidence: 98%

“…On the other hand, the method is simple and often absolute facet temperatures are not required, but only a distinction between batches prepared in a different way. In order to circumvent any interferences with the diode lasers primary emission, front-facet-PL is probed from the barriers, the waveguide, the cladding layers, [21,[133][134][135][136][137] or even from the substrate [138]. PL spectra from these parts are sufficiently spectrally separated from the device emission, which is additionally suppressed by filters.…”

Section: Further Approaches For Facet Temperature Analysismentioning

confidence: 99%

“…Using micro-PL, Yoo et al [136] showed the superiority of Al-free active regions compared to Al-containing ones with respect to the facet temperature. Chavan et al [21] used PL measurements in order to prove facet degradation to be more severe for untreated as compared to passivated facets.…”

Section: Further Approaches For Facet Temperature Analysismentioning

confidence: 99%

See 3 more Smart Citations

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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“…COD schemes similar to Fig. 2 have been published by several other authors as well [9,12,14,21,26,27].…”

Section: Cod and Thermal Runawaymentioning

confidence: 91%

Section: Cod and Thermal Runawaymentioning

confidence: 98%

Section: Further Approaches For Facet Temperature Analysismentioning

confidence: 99%

Section: Further Approaches For Facet Temperature Analysismentioning

confidence: 99%

See 2 more Smart Citations

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…Photoluminescence spectroscopy detects photoluminescence from layers around the QW and waveguide [14][15][16]. Photoluminescence (PL) occurs when a system makes transition to a higher energy level by absorbing a photon and then spontaneously decays to a lower energy level, emitting a photon in the process.…”

Section: Photoluminescence Spectra Measurementsmentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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Photoluminescence (PL) Techniques

Jiménez

Tomm

2016

Spectroscopic Analysis of Optoelectronic Semiconductors

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Comparison of facet temperature and degradation of unpumped and passivated facets of Al-free 940-nm lasers using photoluminescence

Cited by 10 publications

References 16 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Photoluminescence (PL) Techniques

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