Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials 1988
DOI: 10.7567/ssdm.1988.s-iiia-9
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Comparison of Effects of Ionizing Radiation and High-Current Stress on Characteristics of Self-Aligned Bipolar Transistors

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Cited by 2 publications
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“…The bandwidth required to achieve diffractionlimited resolution is inversely proportional to the number of rings (zones) in the zone plates. For example, our zone plate with 40 nm outer zone width and 80 um diameter has , [4] so that a bandwidth of 0.2% is required to achieve diffraction-limited resolution.…”
Section: High-resolution X-ray Imaging With Transmission X-ray Micros...mentioning
confidence: 99%
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“…The bandwidth required to achieve diffractionlimited resolution is inversely proportional to the number of rings (zones) in the zone plates. For example, our zone plate with 40 nm outer zone width and 80 um diameter has , [4] so that a bandwidth of 0.2% is required to achieve diffraction-limited resolution.…”
Section: High-resolution X-ray Imaging With Transmission X-ray Micros...mentioning
confidence: 99%
“…No charging effect and much lower radiation damage than electrons. Devices can remain fully functional when imaged at micrometer to tens of nanometer resolution [2][3][4]. 4.…”
Section: Introductionmentioning
confidence: 99%
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“…No charging effect and much lower radiation damage than electrons. Devices can often remain fully functional when imaged at micrometer to tens of nanometer resolution (Colangelo, 2002;Sun et al, 1986;Chen et al, 1988). 3.…”
Section: Introductionmentioning
confidence: 99%