Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma

Baek, I. K.; Lim, Wantae; Lee, J. W.; Jeon, Minhyon; Cho, G. S.; Pearton, S. J.

doi:10.1116/1.1615984

Cited by 9 publications

(3 citation statements)

References 22 publications

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“…37 Samples were patterned with 1-µm-thick photoresist and mounted on an anodized Al carrier wafer with vacuum heat sink paste. The Al carrier is clamped to the electrode during processing, maintaining a sample temperature of ϳ25°C.…”

Section: Methodsmentioning

confidence: 99%

Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma

Lee

Lim

Baek

et al. 2004

Journal of Elec Materi

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A parametric study of the etch characteristics of Ga-based (GaAs, GaSb, and AlGaAs) and In-based (InGaP, InP, InAs, and InGaAsP) compound semiconductors in BCl 3 /Ar planar inductively coupled plasmas (ICPs) was performed. The Ga-based materials etched at significantly higher rates, as expected from the higher volatilities of the As, Ga, and Al trichloride, etch products relative to InCl 3 . The ratio of BCl 3 to Ar proved critical in determining the anisotropy of the etching for GaAs and AlGaAs, through its effect on sidewall passivation. The etched features in In-based materials tended to have sloped sidewalls and much rougher surfaces than for GaAs and AlGaAs. The etched surfaces of both AlGaAs and GaAs have comparable root-mean-square (RMS) roughness and similar stoichiometry to their unetched control samples, while the surfaces of In-based materials are degraded by the etching. The practical effect of the Ar addition is found to be the ability to operate the ICP source over a broader range of pressures and to still maintain acceptable etch rates.

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Section: Methodsmentioning

confidence: 99%

Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma

Lee

Lim

Baek

et al. 2004

Journal of Elec Materi

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“…Wet etching is traditionally preferred for the GaInP / GaAs material block mainly because of the good etching selectivity of GaInP with respect to GaAs, but it cannot be used to achieve straight profiles in nanometric devices. GaInP etching has already been investigated and reported in electron cyclotron resonance, 14 reactive ion beam etching, 15 RIE, 16 and ICP 13,17,18 techniques with satisfactory results. Past approaches include methane/ hydrogen, methane/hydrogen/chlorine, chlorine/argon.…”

Section: Introductionmentioning

confidence: 99%

Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications

Combrié¹,

Bansropun²,

Lecomte³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this article, we investigate the dry etching of GaInP / GaAs based material system using an inductively coupled plasma ͑ICP͒ etching system. In a view to develop a suitable ICP process for the etching of aluminum-free material, ridge waveguides have been fabricated and the effects of the ICP parameters have been assessed. The coil power and the platen power have been varied at constant pressure and temperature for a chlorine-based process. The surface quality, sidewall profile, and selectivity have been reported. We also demonstrate the optimization of the chlorine-based process for deep etching and its subsequent implementation in photonic band gap device fabrication for 1.55 m optical applications. The optimized process has been shown to provide a high aspect ratio and a good selectivity for 250 nm diam holes with a depth of 3 m in the GaInP / GaAs material system. The influence of the ICP parameters on this material system have been analyzed mainly by scanning electron microscopy with particular attention drawn to the ways of reducing trenching, an effect commonly associated with ICP etching.

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“…Both dry and wet chemical etching methods are reported for III/V materials. 11,12 Dry etching methods, such as reactive ion etching, 11 low energy electron enhanced etching, 13 and inductively coupled plasma etching, 14,15 have the disadvantage that they require relatively expensive equipment to produce the ion beam, electron beam, or plasma. Therefore, in many cases wet chemical etching is a good option.…”

mentioning

confidence: 99%

Study of Wet Chemical Etching of Al[sub x]Ga[sub 1−x]InP[sub 2] Films Using Hydrochloric Acid

Deelen

Mulder

Bauhuis

et al. 2006

J. Electrochem. Soc.

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The etching behavior of Al x Ga 1−x InP 2 ͑0 ഛ x ഛ 1͒ in aqueous HCl was investigated for layers on their native GaAs substrates as well as for layers after releasing from their substrate and transferring to a foreign plastic carrier utilizing the epitaxial lift-off ͑ELO͒ technique. For InGaP 2 layers on their native substrates the activation energy of the etching rate was determined to be 22 kcal/mol for HCl concentrations of both 6 and 12 M. The surface roughness of the partially etched Al x Ga 1−x InP 2 layers as determined with atomic force microscopy ͑AFM͒ was found to decrease with increasing aluminum fraction and to be smaller for 6 M than for 12 M HCl. Al x Ga 1−x InP 2 layers on foreign plastic carriers were often found to be not etched in HCl, in contrast to layers on substrates. This could not be attributed to a single cause and it is suggested that the nonetching behavior is related to a combination of factors, like exposure of the layers to the ELO process and strain induced by the foreign carrier. AFM studies showed an increased density of irregularities at the surfaces of the Al x Ga 1−x InP 2 samples that later showed nonetching behavior.

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Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma

Cited by 9 publications

References 22 publications

Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma

Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma

Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications

Study of Wet Chemical Etching of Al[sub x]Ga[sub 1−x]InP[sub 2] Films Using Hydrochloric Acid

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