Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

“…31 are 1-2 orders of magnitude higher than the interface and border trap densities of devices in Fig. 24 above, as a result of the higher defect densities associated with the high-K dielectrics and/or interfacial layers [31]. Similarly elevated defect densities and noise levels are observed for III-V devices with high-K gate dielectrics [29], [184].…”

“…31 shows a comparative study of the interface-trap and border-trap densities for Ge channel devices that have a five-monolayer Si cap and gate dielectric layers, before and after the devices were irradiated to Mrad with 10-keV X-rays, and after the devices were annealed for 12 h at room temperature. The noise measurements were performed as a function of gate voltage, and energy levels are referenced to the Ge band gap [31]. This benchmark is useful for comparing effective interface-trap and border-trap densities as a function of gate bias, but does not provide information regarding the energy levels of defects in the dielectric layers, as noted in Sections III-A and III-B.…”

“…All irradiations and measurements were performed at room temperature, with the drain and source biased at V and all other terminals grounded. (After Francis et al[31], © 2012, IEEE).…”

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

“…Conley等人 [28] [29] 研究认为高k介电材料的重离子硬击穿电压高于 超薄SiO 2 . Quinteros等人 [30] 和Singh等人 [31,32] 的实验 [37] 、三维FinFET器件 [38] 、U形沟道器件 [39] 、新 型高k栅介质器件 [40] 、非硅沟道器件 [6] 寻找新型高迁移率沟道材料以提升CMOS性能 是一个重要发展方向 [43,44] . GeSn具有很高的空穴迁 移率, 是新型纳米器件最有潜力的沟道材料之一 [45] , [45,46] , 但对其辐射效应研究国内外尚属空白.…”