Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures

Casel, A.; Jorke, H.

doi:10.1063/1.97955

Cited by 41 publications

(21 citation statements)

References 7 publications

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“…This behavior was attributed to the carrier spilling effect and the bevel geometry. 7,13,14 Within the regions with carrier concentrations higher than ϳ1 ϫ 10 18 cm Ϫ3 , the SRP data are in reasonable agreement with the SIMS results, considering that the estimate of error in SRP measurements was Ϯ20%. The experimental SIMS data (As concentration) of the samples are in very good agreement with the simulated SIMS results of the experimental conditions.…”

Section: Resultssupporting

confidence: 85%

Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices

Choi

Seong

2000

J. Electrochem. Soc.

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The introduction of very light implant conditions has made contributions to the shrinkage of semiconductor device dimensions down to the submicron level. 1 The shrinkage in the device dimensions requires assessment techniques with high spatial resolution which are capable of obtaining carrier distribution and junction depth, in particular, the lateral diffusion of dopants below the gate area of metal-oxide-semiconductor (MOS) devices. Techniques such as transmission electron microscopy (TEM), 2-7 scanning electron microscopy (SEM), 8 and atomic force microscopy (AFM) 9 have been successfully employed to obtain experimental two-dimensional (2D) dopant profiles in semiconductor devices. A basic idea of these techniques is related to a combination of the selective chemical etching of doped layers and the microscope examination of the etched surface. The principle of selective chemical etching used for dopant profiling is expressed by 10 3Si ϩ 4HNO 3 ϩ 18HF r 3H 2 SiF 6 ϩ 4NO ϩ 8H 2 O The HNO 3 oxidizes the silicon surface, while HF removes the oxide product. The addition of dopants leads to a decrease in the activation energy for the oxidation process and so the etching rate increases with increasing doping level. In other words, the higher the doping level, the faster the etching rate. Thus, dopant-concentration-dependent etching leads to the formation of thickness fringes in the TEM images. These fringes may represent isoconcentration contours. By calibrating the thickness variation of the etched sample using onedimensional (1D) secondary ion mass spectroscopy (SIMS) 11 and spreading resistance profiling (SRP), 12 the dopant/carrier distribution can be spatially mapped out.In this article, the TEM technique combined with selective chemical etching has been used to assess 2D dopant profiles in metaloxide-semiconductor field effect transistor (MOSFET) test structures with a gate length of ϳ1 m and real MOS devices with gate lengths of 500 and 80 nm; the effects of implantation conditions on the delineation behavior of n ϩ regions are investigated. The TEM results were calibrated using 1D SIMS data. The experimental lateral results are compared with the SUPREM IV-simulated 2D profiles.Experimental A test structure was made for a junction profiling study. A series of MOSFETs having n ϩ /p junctions were fabricated using different implantation conditions. The substrate doping level was ϳ10 15 cm Ϫ3 . Implantation of arsenic was performed with energies in the range 35-100 keV to doses of 2 ϫ 10 13 and 1 ϫ 10 14 cm Ϫ2 . These samples were then annealed at 950ЊC for 30 min in a flowing nitrogen atmosphere. All the samples were covered by polysilicon layers to protect the surfaces from the damage that can occur during the TEM sample preparation and etching processes.For TEM examination, cross-sectional thin foil specimens were prepared using a conventional "sandwich" technique. A sandwich structure was prepared by gluing one sample on a piece of scrap silicon face to face. After mechanical polishing, the glued specimens we...

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Section: Resultssupporting

confidence: 85%

Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices

Choi

Seong

2000

J. Electrochem. Soc.

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“…27,28 In the case of SRP measurements, the concentration profiles reported in Figs. 2͑c͒ and 2͑d͒ ͑triangles͒ have been obtained using the iterative method proposed by Casel et al 26 ͑cf. Sec.…”

Section: Resultsmentioning

confidence: 99%

“…The samples were beveled at an angle of 4°and the probe spacing was 30 m. The analysis of the SRP data has been performed using the iterative method proposed by Casel et al, 26 in which a starting active dopant profile is used to calculate the experimental SRP profile ͑resistance versus depth͒ from Poisson's equation and taking into account the zero bias depletion effect. 27,28 Once a good agreement between the calculated and the experimental profiles is achieved, the starting active dopant profile is validated.…”

Section: B Characterization Processmentioning

confidence: 99%

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Séverac¹,

Cristiano²,

Bedel-Pereira³

et al. 2009

Journal of Applied Physics

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Articles you may be interested inInfluence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profilesThe Hall scattering factor r H has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters ͑BICs͒, combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r H = 0.74Ϯ 0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r H value has been found to be equal to 0.95Ϯ 0.1. The increase in the r H value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.

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“…The shallow depth of standard SRP as compared to SIMS is due to the phenomenon of carrier spilling and the bevel geometry. 16 In the absence of a p-n junction the SRP data should match with the SIMS data, but even in this case the SIMS data show a deeper profile than the SRP. As the boron profile approaches the background, small changes in the depth gives large changes in the order of magnitude of the associated dopant ͑carrier͒ concentration.…”

Section: Calibration Of Etch Depth Using Sims Datamentioning

confidence: 79%

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

Neogi¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Transmission electron microscopy (TEM) was used to characterize image contrast obtained from doping-dependent etching of p-n junctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The samples used for the study consisted of solid source diffusions of boron into substrates of varying resistivities of both n- and p-type. The factors which affect the interpretation of dopant profiles obtained from selective chemical etching of cross section TEM samples is addressed. One-dimensional chemical dopant concentration data were derived from secondary ion mass spectroscopy and one-dimensional carrier concentration data were derived from spreading resistance profiling.

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Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures

Cited by 41 publications

References 7 publications

Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices

Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

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