Comparison of annealing effects on Zn-doped GaMnAs and undoped GaMnAs epilayers

Nakagawa, Hiroyuki; Asubar, Joel T.; Yang, Jinbo; Uchitomi, Naotaka

doi:10.1016/j.apsusc.2008.04.041

Cited by 2 publications

(2 citation statements)

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“…Additionally, according to the Hall resistance slopes, hole concentrations are calculated to be 1.6×10 20 , 4.9×10 20 , 7.9×10 20 , 8.4×10 20 , and 9.6×10 20 cm -3 for samples Zn-0, Zn-1, Zn-2, Zn-4, and Zn-8, respectively, again proving the successful substitutional Zn doping. The increase of hole concentration introduced by Zn doping was also confirmed in LT-MBE grown (Ga,Mn)As [35][36][37]. In the as-grown samples [31], the authors also found that although the hole concentration is higher in Zn co-doped sample the Curie temperature is lower compared with un-codoped (Ga,Mn)As.…”

Section: B Magneto-transport Propertiesmentioning

confidence: 70%

p -type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Zhang

Wang

et al. 2019

Phys. Rev. Materials

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In the present work, we perform a systematic investigation on p-type co-doping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford-Backscattering Spectrometry and Particle-Induced X-ray Emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy.

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Section: B Magneto-transport Propertiesmentioning

confidence: 70%

p -type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Zhang

Wang

et al. 2019

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…These defects, especially, Mn interstitial atoms Mn int and As antisites As Ga , are formed during low-temperature growth. Reducing these defects by low-temperature annealing leads to enhancement of T C and hole concentration p. We have also investigated the effect of the low-temperature thermal annealing on the properties of Zn-doped (Ga,Mn)As epilayers [12]. The resistivity-maximum temperatures T rmax (indicate value close to T C ) estimated from the measurement of temperaturedependent resistivity were compared for Zn-doped (Ga,Mn)As samples and undoped (Ga,Mn)As with the same structure.…”

Section: Introductionmentioning

confidence: 98%