2005
DOI: 10.1016/j.jcrysgro.2004.11.022
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Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

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Cited by 5 publications
(8 citation statements)
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“…In classical methods, the axial segregation pattern for dilute Te-doped ingots usually follows the so-called Scheil law, which corresponds to a higher Te content at the top of the ingot compared with the bottom. A transgression of this law was previously observed, for In atoms, in Ga 1Àx In x Sb alloys grown by VFM [3]. In the case of Te-doped GaSb dilute alloy, the Te segregation coefficient at equilibrium is about k 0 ¼ 0.37 [4], but when growth occurs far from equilibrium, the effective segregation coefficient (k e ) differs from its equilibrium value approaching unity.…”
Section: Article In Pressmentioning
confidence: 54%
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“…In classical methods, the axial segregation pattern for dilute Te-doped ingots usually follows the so-called Scheil law, which corresponds to a higher Te content at the top of the ingot compared with the bottom. A transgression of this law was previously observed, for In atoms, in Ga 1Àx In x Sb alloys grown by VFM [3]. In the case of Te-doped GaSb dilute alloy, the Te segregation coefficient at equilibrium is about k 0 ¼ 0.37 [4], but when growth occurs far from equilibrium, the effective segregation coefficient (k e ) differs from its equilibrium value approaching unity.…”
Section: Article In Pressmentioning
confidence: 54%
“…A detailed description of the VFM has been reported in our previous works [2,3]. Briefly, it consists of a two separated vertical crucibles set-up placed in a two-zone furnace, where the temperature of each zone is controlled independently as it is shown on Fig.…”
Section: Methodsmentioning
confidence: 99%
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“…Our experience in bulk growth of GaInSb materials prepared by the Vertical Bridgman technique showed that the In concentration increase along the growth axis following a Scheil law [11] leading to a low yield for the production of substrates with high In content.…”
Section: Principal Resultsmentioning
confidence: 99%
“…After solidification, the furnace was slowly cooled down to room temperature. A Te-doped In x Ga 1-x Sb ingot of the same size of the undoped crystal, with a 6% nominal In content, was grown by the Vertical Feeding Method (VFM) [8] with continuous feeding in a two-zone furnace. The feeding material was heated up to a few degrees above the melting temperature for 6 h. The temperature of the growing chamber was held at 580 ºC and the feeding rate set to 5 mL/min.…”
Section: Methodsmentioning
confidence: 99%