Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si

Effect of growth and annealing temperatures on crystallization of tantalum pentoxide thin film prepared by RF magnetron sputtering method

“…The diffraction pattern best fits with JCPDS 25-0922 in orthorhombic structure and the major peak is (0 0 1). In a previous study by Chaneliere et al [10], [10,15]. The average deposition rate of the Ta 2 O 5 thin film at different argon/oxygen ratio with the metal target is listed in Table 1.…”

“…However, from limited literatures, as grown in preferred (2 0 0) axis crystalline structure it also has good piezoelectric property (high k 33 ) and could be used in MEMS, resonator, and filters (e.g., surface acoustic wave devices) [6][7][8]. It was also reported that Ta 2 O 5 thin films with strong (0 0 1) orientation have an exceptionally high dielectric constant [9] and better leakage current properties [4,10]. Higher optical indices are also reported for crystalline Ta 2 O 5 thin films [11].…”

The importance of network structure in high-k dielectrics: LaAlO3, Pr2O3, and Ta2O5

“…In the former case increased dielectric constants varying from 30 to 50 have been reported [27][28][29] whereas in the latter ͑hexagonal͒ the dielectric constant is reported between 55 and 64. 30 Note that the orthorhombic phase appears to be the most stable form. Of particular note is the data 31,32 concerning the effect of substitution of Ta 2 O 5 by small quantities of TiO 2 ͓particularly 0.92͑Ta 2 O 5 ͒ 0.08͑TiO 2 ͔͒-k values of 126 and 189 have been reported for these mixed oxide compositions.…”

Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation

“…PF is based on the emission of trapped electrons toward the conduction band of the insulator [20,21]. Current density governed by the PF mechanism through the dielectric is given as [22];…”