Comparing 650V and 900V SiC MOSFETs for the application in an automotive inverter

Bertelshofer, Teresa; Horff, Roman; März, Andreas; Bakran, Mark-M.

doi:10.1109/epe.2016.7695540

Cited by 6 publications

(6 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Upcoming challenges: This review has characterised the main power device technologies suitable for HGV applications. Nevertheless, considering the converter implementation, other challenges include EMI/EMC [93][94][95], investigating the impact of high voltage commutation rates on motor insulation reliability [96][97][98], power module/converter designs involving multiple chips in parallel and optimised busbars [99][100][101], thermal management and increased power densities [102,103], short circuit detection [104,105] and application-specific qualification methodologies/guidelines, as suggested by the JEDEC JC-70 guidelines and the ECPE guidelines for the qualification of power modules used in motor vehicles (AQG 324) [106]. The increased commercial availability of higher voltage devices (1.7 kV to 3.3 kV rated) may open new avenues for higher voltage charger designs and even higher inverter bus voltages.…”

Section: Discussionmentioning

confidence: 99%

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

et al. 2023

View full text Add to dashboard Cite

This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging (350 kW and above); (ii) road electrification with overhead catenaries supplying power through a pantograph to the HGV powertrain; (iii) hydrogen supplying power to the powertrain through a fuel cell; (iv) any combination of the first three technologies. At the heart of the HGV powertrain is the power converter implemented through power semiconductor devices. Given that the HGV powertrain is rated typically between 500 kW and 1 MW, power devices with voltage ratings between 650 V and 1200 V are required for the off-board/on-board charger’s rectifier and DC-DC converter as well as the powertrain DC-AC traction inverter. The power devices available for HGV electrification at 650 V and 1.2 kV levels are SiC planar MOSFETs, SiC Trench MOSFETs, silicon super-junction MOSFETs, SiC Cascode JFETs, GaN HEMTs, GaN Cascode HEMTs and silicon IGBTs. The MOSFETs can be implemented with anti-parallel SiC Schottky diodes or can rely on their body diodes for third quadrant operation. This review examines the various power semiconductor technologies in terms of losses, electrothermal ruggedness under short circuits, avalanche ruggedness, body diode and conduction performance.

show abstract

Section: Discussionmentioning

confidence: 99%

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Today, most of the commercial SiC SBDs and MOSFETs as well as Si IGBTs are packaged in transistor outline (TO) series discrete packages and multi-chip power modules with standardized footprints and wire bond interconnects. These bottom-side cooled packages are able to achieve reasonable R th due to the high k T of SiC, but, due to the higher current densities of SiC MOS-FET dies associated with the smaller chip size compared with Si IGBTs, current de-rating is often needed to avoid overheating of the devices during operation [91]. Accordingly, extensive research efforts have been devoted to further reducing the R th of SiC packages to enable greater heat dissipation under both steady-state and transient conditions.…”

Section: Sic Diode and Mosfetmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

show abstract

“…But, to use these WBG devices effectively, new challenges are needed to pay attention to decrease EMI noise level, suitable gate drivers design as well as PCB layout for the EV-based power converters with high frequencies up to MHz. Recently, many research areas have been studied to solve these issues such as different approaches to characterize SiC devices under various operating conditions [2], [3] and to understand the effect of current collapse on GaN devices [4]. Minimizing Lpara value for GaN devices is presented in [5].…”

Section: Wide-bandgap Power Semiconductors For Electric Vehiclementioning

confidence: 99%

“…Switching transition and losses under both hard switching and soft switching conditions [2], [3]. • Device capacitance losses.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Thang

Trovão²,

et al. 2021

IEEE Veh. Technol. Mag.

View full text Add to dashboard Cite

In recent years, researchers have been attracted towards the application of Wide-Bandgap (WBG) power semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in Electric Vehicle (EV) applications. Their advantages over Silicon (Si) power semiconductors are lower power losses, higher switching frequencies and higher junction temperatures. Thus, the usage of WBG power semiconductor devices for EV power electronic systems is to improve EV efficiency, reliability, and mileage. However, these adoptions are still under challenges in terms of packaging and power converters design. In this paper, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, recent progress of different commercial WBG power semiconductor devices are reviewed and different solutions in order to solve the research and development challenges are evaluated.

show abstract

Comparing 650V and 900V SiC MOSFETs for the application in an automotive inverter

Cited by 6 publications

References 2 publications

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Contact Info

Product

Resources

About