Comparative study on structural, morphological and optical properties of Zn2SnO4 thin films prepared by r.f. sputtering using Zn and Sn metal targets and ZnO–SnO2 ceramic target

Mereu, R.A.; Donne, A. Le; Trabattoni, Silvia; Acciarri, M.; Binetti, S.

doi:10.1016/j.jallcom.2014.11.150

Cited by 37 publications

(15 citation statements)

References 25 publications

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“…An average surface roughness of ~18Å was found by this measurement which was close to the ideal film properties. These good structure characteristics of the fabricated Zn 2 SnO 4 film have a good match with previous reported results (Mereu, Le Donne et al 2015), and were ideal to be used as a buffer layer. Therefore, we have then fabricated solar cell layers to form a solar cell device in the forms shown in Fig.…”

Section: Results and Discussion:-supporting

confidence: 87%

“…It can be revealed that the fabricated Zn 2 SnO 4 buffer layer thin film exhibits near-zero absorptance, quite small reflectance and high optical transmittance particularly in the visible range and higher. These results showed good match with other research groups (Bapanapalli 2005, Mereu, Le Donne et al 2015. The bandgap calculation that was estimated by using the Tauc equation (Grahn 1999) shows that the Zn 2 SnO 4 buffer layer has a wide and close to ideal optical bandgap of (~3.4 eV) (Bapanapalli 2005).…”

Section: Results and Discussion:-supporting

confidence: 85%

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Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment

Al-mebir

2019

University of Thi-Qar Journal of Science

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In this paper, a highly transparent and conductive Zinc Stannate (Zn 2 SnO 4) buffer layer is integrated between the transparent conductive oxide (TCO) layer and the Cadmium Sulfide (CdS) window layer to improve the optical properties of (TCO\Zn2SnO4\CdS\CdTe) heterojunctions in CdTe\CdS solar cells. This buffer layer is used to reduce the excess interdiffusion between the window and absorber layers when Ultra-thin CdS window layer, d < 100 nm, is employed, and post CdCl 2 treatment is applied at high temperature after deposition of CdTe layer. The fabricated Zinc Stannate (Zn 2 SnO 4) buffer layer was found to have ideal transmission, reflectance and absorption properties which helped in introducing good optical properties in the short wavelengths. It has been found that using the Zn 2 SnO 4 buffer layer enhanced the short circuit current Jsc and the open circuit voltage Voc of the solar cells that used Ultra-thin CdS thickness (80nm) by preventing TCO\CdTe direct contact, and led to improved solar cells' performance and reproducibility.

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Section: Results and Discussion:-supporting

confidence: 87%

Section: Results and Discussion:-supporting

confidence: 85%

Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment

Al-mebir

2019

University of Thi-Qar Journal of Science

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“…The resistivity of Zn2SnO4 is usually higher than that of ZnSnO3 [19]. This is reflected well in literature data of conductivity for ITO (σ = 104 Ω -1 cm -1 [20]), for HRT layers as Zn2SnO4 (σ = 50-100 Ω -1 cm -1 [21,22]) and for ZnSnO3 (σ = 250 Ω -1 cm -1 [17,23]). It should be mentioned that the ZTO film's properties are critically dependent on the growth conditions.…”

Section: Introductionsupporting

confidence: 78%

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

et al. 2020

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In this study, the impact of compositional variation of highly resistivity transparent (HRT) metal oxide ZTO deposited by co-sputtered technique has been studied. The atomic composition has been tailored by the change of RF power and subsequent thermal oxygenation in mixed nitrogen and oxygen atmosphere. A phase transition from ZnSnO3 to ZnSnO4 was observed in the X-ray diffraction spectra, indicating the possible oxygen incorporation into the films during the thermal annealing process. Uniform microstructures with compact interconnected grains of around 6-7 nm were found in SEM images while no significant changes been observed upon oxygenation. Besides, the significant alteration of electronic properties was noticed as an effect of compositional variation via oxygenation. All the films showed above 85% of optical transmittance in the visible light spectrum. The optimum optoelectronic properties for RF power has been determined as of 50W (ZnO) and 10W (SnO2) via thermal oxygenation at 400 o C where the ratio O/(Zn+Sn) become around 1.6. The significant effect of oxygenation has been realized via primarily fabricated solar cells where the cell with ZnSnO4 HRT shows higher efficiency than the ZnSnO3.

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“…The ZnO NW exhibits a broad peak centered at 443 cm -1 , which corresponds to the E2 mode for ZnO [34]. After deposition of the ZSO shell layer, that is, for the ZSO/ZnO HNA, two peaks, at 443 and 673 cm -1 , are observed, corresponding to the E2 mode for the ZnO and A1g modes (stretching vibration mode of SnO6 octahedra) of spinel-type Zn2SnO4 [35]. Consequently, a Zn2SnO4 shell layer with nanoparticle morphology was successfully formed on the ZnO NWs via thermal evaporation, followed by post-annealing.…”

Section: Resultsmentioning

confidence: 99%

Thermal Evaporation Synthesis of Vertically Aligned Zn2SnO4/ZnO Radial Heterostructured Nanowire Arrays

Han¹,

Kang²,

Jeong³

et al. 2021

Preprint

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Abstract The construction of a heterostructured nanowire array allows the manipulation of the interfacial, surface, charge transport, and transfer properties simultaneously, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed a facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowire arrays (HNA). Vertically aligned ZnO nanowire arrays (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowire array.

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Comparative study on structural, morphological and optical properties of Zn2SnO4 thin films prepared by r.f. sputtering using Zn and Sn metal targets and ZnO–SnO2 ceramic target

Cited by 37 publications

References 25 publications

Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment

Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment

Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

Thermal Evaporation Synthesis of Vertically Aligned Zn2SnO4/ZnO Radial Heterostructured Nanowire Arrays

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