Comparative study of the CZTS, CuSbS2 and CuSbSe2 solar photovoltaic cell with an earth-abundant non-toxic buffer layer

Improving the Performance of Lead‐Free FASnI3‐Based Perovskite Solar Cell with Nb2O5 as an Electron Transport Layer

“…The horizontal axis intercept typically corresponds to the V bi of organic semiconductor devices, and the slope of 1/ C 2 (V) in the MS plot is interpreted as a density of engaged trapping centers. [ 64–67 ] Figure a,b shows the simulated C–V characteristics and the MS plot of the suggested PSC as a function of the shallow uniform donor density of Nb 2 O 5 ETL. The doping density of Nb 2 O 5 ETL is varied from 10 14 to 10 21 cm −3 .…”

“…In order to optimize the device entirely, we have also observed the capacitance–frequency ( C – f ) characteristics of the proposed PSC structure and the simulated C – f curves are illustrated in Figure . The characteristics of capacitance as a function of frequency are measured under zero‐bias condition and at an operating temperature of 300 K. [ 65–67,69 ] The capacitance value is sufficiently low at the frequency below 10 7 Hz, as shown in Figure 9. However, the capacitance increases rapidly beyond 10 7 Hz, and the maximum capacitance is observed in the frequency ranged from 10 7 to 10 11 Hz.…”

“…The horizontal axis intercept typically corresponds to the V bi of organic semiconductor devices, and the slope of 1/C 2 (V) in the MS plot is interpreted as a density of engaged trapping centers. [64][65][66][67] 8a indicates that the capacitance rises gradually as the applied voltage increases. It is observed that there is a less significant change in the capacitance with the ETL donor density.…”

“…The V bi can be determined us- ing the MS equation, which links the capacitance per unit area and the doping density N A at the p-side in p-n junction. [65,66] The intercept of the inferred linear portion of the MS plot at the horizontal axis estimates the V bi of the PV device junction, [64][65][66][67] as shown in Figure 8b. Herein, the V bi of ≈0.67 eV at the optimized donor doping density of ETL is obtained for the proposed PSC structure.…”

The effect of boron doping on the optical, morphological and structural properties of Cu3SbS3thin films preparedviaspin coating

“…However, despite their high power conversion efficiencies, the elemental scarcity of In, the toxicity of Cd and the high cost of Ga limit the widespread use of this technology. 7,9,10 As an alternative to these, new solar cell concepts such as organic solar cells, perovskite solar cells (PSCs) (lead-free in particular 1,4,5 ), quaternary kesterite compound Cu 2 ZnSn(SSe) 4 (CZTSSe) solar cells, dye-sensitized solar cells (DSSCs) and quantum dot solar cells have been developed in the past decade. 8 The quaternary kesterite compound Cu 2 ZnSn(SSe) 4 (CZTSSe), which is non-toxic and has a high amount of precursor elements, is a suitable material for photovoltaic applications with optoelectronic properties similar to CIGS.…”