Comparative study of SiO_2, Si_3N_4 and TiO_2 thin films as passivation layers for quantum cascade lasers

Ferré, Simon; Peinado, Alba; Garcia-Caurel, Enric; Trinité, Virginie; Carras, Mathieu; Ferreira, Robson

doi:10.1364/oe.24.024032

Cited by 13 publications

(8 citation statements)

References 27 publications

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“…An additional phonon excitation was identified at ≈100 meV, similar to other reports for the SiN amorphous phase using optical spectroscopy. [45,46] This resonance is associated with the excitation of Fuchs-Kliewer (FK) modes sustained in the SiN film. In particular, in the transmission geometry, the fast electron couples predominantly to the dispersive , where c is the speed of light and ε air = 1.…”

Section: Higher-energy Resolution Datamentioning

confidence: 99%

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Kapetanovic

Bicket

Lazar

et al. 2020

Advanced Optical Materials

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Transparent conductive oxides (TCOs) have strong potential for plasmonic applications. Given their easily tunable properties and low energy response, significant challenges in the controlled fabrication and precise characterization of TCOs must be better understood before this potential can be realized. Here, the mid‐ to near‐infrared plasmonic response of Sn‐doped In2O3 (ITO) nanostructures is presented, fabricated top‐down using electron beam lithography and radio‐frequency sputtering. These equilateral ITO triangles of different side lengths are imaged at high spatial and energy resolution with monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope. Applying the Richardson–Lucy (RL) deconvolution algorithm to experimental EELS spectra reveals localized surface plasmon (LSP) excitations between 150 and 550 meV and a 730 meV bulk plasmon. This very‐low‐energy response to an electron beam is compared with boundary element method simulations of nanostructures. These simulations use the dielectric functions of continuous thin films of the same materials, characterized by ellipsometry, 4‐point probe, and Hall effect tests. Additionally, upon rapid thermal annealing of ITO, blue‐shifts in LSP energy, and longer LSP lifetimes are examined as a consequence of an amorphous‐to‐polycrystalline transformation and an increase in the free carrier density.

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Section: Higher-energy Resolution Datamentioning

confidence: 99%

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Kapetanovic

Bicket

Lazar

et al. 2020

Advanced Optical Materials

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“…The lower resistance value obtained for the sol-gel SiO 2 is due to the current limitation of our measurement setup and we believe that it is highly comparable to CVD SiO 2 . The surface resistivity obtained makes the sol-gel SiO 2 layer suitable as a passivation layer for optical and electronic devices [24]. Ellipsometry measurement was conducted on the sol-gel SiO 2 layer and the refractive index was measured to be 1.42 at a wavelength of 632.8 nm.…”

Section: Sol-gel Sio 2 As Cladding Layersmentioning

confidence: 99%

Multi-layer stacking scheme of sol-gel based SiO<sub>2</sub> towards thicker (>0.8 µm) cladding layers for optical waveguides

Idris

Jiang

Hamamoto

2018

IEICE Electron. Express

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A multi-layer stacking scheme using a sol-gel SiO 2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO 2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 10 13 Ω/m was obtained. Furthermore, a-Si/SiO 2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.

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“…To achieve the best performance, conventional bolometers are designed with multiple layers such as vanadium oxide, α-Si, poly-SiGe, and metal that used as thermistors [14]. By considering their small conductivity, often SiO2 and Si3N4 are used as absorbing layers [15][16]. Also, these layers can be replaced with other materials such as metal thin film that reduce the thermal conductance, and these scenarios make a simplify fabrication of device.…”

Section: Introductionmentioning

confidence: 99%

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Hamouleh-Alipour

Mir

Farmani

2021

Preprint

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Bolometer sensors are prominent and excellent choice in technology because they do not need cooling. The trade-off between high sensitivity, fast response time, and strong light absorption is a key important challenge in bolometer sensors. Here, the bolometric effect for a high resistance sensitivity plasmonic sensing of total and profile infusion of radiation is studied for the proposed bolometer sensor based on plasmonic multilayer structure at 26° C. In the present study, by generating strong coupling condition between incident wave and surface plasmon polaritons (SPPs), a very narrow absorption spectra with high figure of merit (FoM) is achieved. The analytical model and numerical simulation are fulfilled based on the transfer matrix method (TMM) and 3-D finite-difference time-domain (FDTD), respectively. The narrow absorption spectra that generate by strong coupling with SPPs heats the silver thin film that leads to variation in temperature and supports TE surface mode. This temperature change rectifies the resistance of the metal thin film by the bolometric effect. So, optical characteristics of the proposed metasurface bolometer sensor, including quality factor (Q), sensitivity, and figure of merit (FoM) are calculated that Max sensitivity, FoM, and Q are 17.2 RIU-1, 530 and 434.5, respectively. Finally, we analytically simulate the temperature coefficient of resistance (TCR) in terms of wavelength and refractive index of analyte (na) that this resistance change can be monitored by an external electric model. The proposed plasmonic multilayer configuration is a very compact footprint structure that achieved high resistance sensitivity and FoM in comparison with any previous reports. This proposed thermal, optical, and electric plasmonic metasurface bolometer sensor can be used in different applications such as biophysics, biology, and environmental science.

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Comparative study of SiO_2, Si_3N_4 and TiO_2 thin films as passivation layers for quantum cascade lasers

Cited by 13 publications

References 27 publications

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Multi-layer stacking scheme of sol-gel based SiO<sub>2</sub> towards thicker (>0.8 µm) cladding layers for optical waveguides

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

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