Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths

Abstract

Articles you may be interested inPattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors Scaling the SiGe channel p metal-oxide-semiconductor field effect transistor: The case for p+ SiGe gates A low temperature gate oxide process for n -channel SiGe modulation doped field effect transistors A self-aligned process used to fabricate p-type SiGe metal-oxide-semiconductor modulation-doped field effect transistors ͑MOS-MODFET͒ is described. Self-and nonself-aligned p-type Si 0.2 Ge 0.8 /Si 0.7 Ge 0.3 MOS-MODFETs with gate-lengths from 1 m down to 100 nm were fabricated. The dc and microwave characteristics of these devices are presented. In comparison with nonself-aligned devices, self-aligned devices exhibited higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies f T , and maximum oscillation frequencies f MAX . Self-aligned MOS-MODFETs with a gate length of 100 nm exhibited an extrinsic transconductance of 320 mS/mm, an f T of 64 GHz, and an f MAX of 77 GHz. To our knowledge, these are the highest data ever reported for any MOS-type p-FETs with a SiGe channel. All these excellent performances were measured at very low drain and gate biases.

Si/SiGe heterostructures: from material and physics to devices and circuits

“…The solid line is theory [94] for the maximum value of f T predicted for n-MODFETs. Data are from [95][96][97][98][99][100][101][102][103][104][105][106][107]. III-V HEMT devices.…”

“…The solid line (dashed line) is a guide to the eye for the maximum value of g m achieved for n-MODFETs (p-MODFETs). Data are from[94][95][96][97][98][99][100][101][102][103][104][105][106][107].…”

Fluid–solid interaction finite element modeling of a kinetically driven growth instability in stressed solids

“…In particular, this is motivated by the objective of producing highquality semiconductor thin films. For example, SPE in Si-Ge alloys has been under extensive investigations as electronic and optoelectronic manufacturers are trying to use Si-Ge thin films in creating a new generation of faster microchips (e.g., [2][3][4]). However, there is a complex feature in the formation of Si-Ge thin films which stems from the currently unpredictable interaction between the chemistry and elasticity (or stress) effects.…”