Abstract:The kinetically driven growth instability in stressed solids has been a subject of recent investigation as there is an increasing interest in the effects of non-hydrostatic stresses on crystal growth processes. Recent experimental and modeling work using advanced numerical methods such as boundary element and level set methods have demonstrated that the effect of stress on the solid phase epitaxy (SPE) growth of crystalline silicon from the amorphous phase is responsible for the roughening of its amorphous-cry… Show more
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