Abstract:Electrical characterization of MOS structures and device modeling require accurate information about dopant concentration, particularly at the poly-Si/SiO2 interface. We compare four experimental techniques (secondary ion mass spectrometry SIMS, resonant ion mass spectrometry RIMS, differential Hall effect profiling, and spreading resistance analysis) to measure boron and free carrier concentrations in poly-Si, SiO2 and crystalline Si. We find that no single technique completely characterizes the entire MOS st… Show more
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