Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers

Rui, Yunjun; Li, Shuxin; Xu, Jun; Cao, Yunqing; Li, Wei; Chen, Kunji

doi:10.1016/j.jnoncrysol.2012.01.054

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…In our previous works, Si QDs/SiO 2 , Si QDs/SiN x , and Si QDs/SiC multilayers were fabricated by thermal annealing of amorphous Si/SiO 2 , Si/SiN x , and Si/SiC multilayered structures [ 13 - 15 ]. An intense electroluminescence (EL) was achieved in Si QDs/SiC multilayers and the EL peak energy redshifted with increasing the Si QDs size, which indicated the quantum confinement effect [ 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

et al. 2014

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Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.PACS81.07.Ta; 78.67.Pt; 88.40.jj

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Section: Introductionmentioning

confidence: 99%

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

et al. 2014

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“…Si NCs with well constrained dot sizes are formed in Si sublayers. Meanwhile, Si NCs are close to each other and separated by amorphous structure according to Figure 1 b, indicating good size-controllability of Si NCs in the stacked structures [ 25 ].…”

Section: Resultsmentioning

confidence: 99%

“…In our previous work, we investigated electron spin resonance of size-varied Si NCs/SiC multilayers induced by P dopants and carrier transport behaviors of various P-doped Si NCs/SiC multilayers, respectively [ 16 , 24 ]. Electroluminescence (EL) of Si NCs/SiC multilayers and Si NCs embedded in a SiC matrix have also been discussed in detail [ 25 , 26 , 27 ]. In the present work, 4 nm sized Si NCs/SiC multilayers with various P-doping ratios are fabricated.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Sun

Chen

et al. 2023

Nanomaterials

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Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

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“…Moreover, the 2.7-nm Si-QDs in Si-QD/SiC multilayer were used as active layer. This Si-QD LED exhibited its EL peak at 650 nm and improved EL power by 8.6 times than the device with the Si-QD/SiC single layer [154]. Wang and co-workers also fabricated the SiC LED with a p-i-n structure to observe two EL peaks at 689 and 775 nm owing to the contribution of different-size Si-QDs [155].…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

“…In 2012, Huang et al also fabricated the Si-QDs with an average size of 2.4 nm and an area density of 4.6 × 10 12 cm −2 in Si-rich SiN x film to demonstrate the 710-nm Si-QD LED [ 152 ]. Owing to the dielectric host matrix with the relatively large resistivity to decrease the current injection efficiency, the SiC semiconductor was selected as a candidate of host matrices [ 153 , 154 , 155 , 156 , 157 ]. In 2011, Rui et al detuned the Si-QD from 4.2 to 1.4 nm in SiC host matrix by detuning the C/Si composition ratio and annealing temperature to blue-shift the EL peak of the Si-QD LED from 775 to 539 nm.…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Cheng

Lin

2020

Materials

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This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

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Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers

Cited by 10 publications

References 20 publications

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

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