Comparative study of dielectric formation by furnace and rapid isothermal processing

Abstract

An examination of our own and results available in the literature indicate that the dielectric properties of silicon dioxide and tin oxide on Si formed by rapid isothermal processing are superior compared to furnace processing. A possible explanation based on the primary difference in the radiation spectrum of the two sources of energy is presented in this paper. Certain physical and chemical processes can be prompted and/or initiated due to the presence of light in the rapid isothermal processing.

Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition

“…Based on our understanding about the role of photons in rapid isothermal processing, [11][12][13][14][15][16][17][18][19] we have designed and built our MOCVD system. Figure 1 shows a schematic diagram of the MOCVD system used for the deposition of thin films of PLZT.…”

Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing

“…In the case of BPOA processing, only thermal conduction energy is considered in the annealing. Nevertheless, for the case of FPOA processing, photons near the UV region are available [10]. It is proposed that the photons provide available energy to break the strained bonds or defects in an oxide so that they are easier to be reconstructed during annealing.…”

Photo-Assisted MOCVD Fabrication of YBCO Thick Films and Buffer Layers on Flexible Metal Substrates for Wire Applications

“…16 In principle, thermal activation is severely limited by the Boltzmann distribution, whereas photo-activation can circumvent this limitation by direct photo-absorption. [17][18][19] This is the major motivation for the adaptation of the photo-assisted technique to MOCVD growth of YBCO films and has led to the observation of very high growth rates for high quality superconducting films grown by this technique, as described earlier. 8,10 Both roll-textured Ni foils with and without CeO 2 and YSZ buffer layers as well a single crystal Ni(100) sample with buffer layers of CeO 2 and YSZ were used in this study.…”