The development of new high dielectric constant materials is essential for the development of advanced silicon integrated circuits. In this letter, we report preliminary results of lanthanum doped lead zirconate titanate (PLZT) films deposited by dual spectral sources (DSS) rapid isothermal processing (RIP) assisted metalorganic chemical vapor deposition (MOCVD) system. The dielectric constant and leakage current density data reported in this letter represents the best results reported to date. The use of high energy photons play an important role in the deposition of high quality dielectric films
Cu and barrier removal peculiarities were studied and a differential multislurry ͑DMS͒ chemical mechanical planarization ͑CMP͒ process for dual damascene technology was developed. Process shows Cu removal rates up to 1.2 m/min with an average nonuniformity Ͻ5%. Annealing was shown to have impact on process stability. Details of Cu removal mechanism were studied. Cu removal process was found to be temperature insensitive and following Preston's law that indicates its pseudo-mechanical nature. Abrasive enhancement of chemical activity was shown to be important for Cu removal. Phenomenon of metal feature thinning ͑MT͒ and dielectric erosion ͑DE͒ in heterogeneous CMP was analyzed and compared with data obtained for various conditions. It was shown that properties of all major acting CMP characters: the tool ͑loading͒, the slurry ͑selectivity͒, and the pad ͑hardness͒ are contributing to MT. Hard pad, slurry selectivity р1 in the end of Cu clearance phase and low polishing pressure help to minimize MT. Some MT and DE related process integration issues are discussed, as well.
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