Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K

Wendler, E.; Breeger, B; Schubert, C.; Wesch, W.

doi:10.1016/s0168-583x(98)00597-7

Cited by 46 publications

(13 citation statements)

References 41 publications

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“…Fig. 14 depicts the damage concentration versus the ion fluence N I for three examples for which T I % T c is fulfilled [47]. Similar curves are also measured for silicon ion implanted at the corresponding temperatures (see [40] and references therein).…”

Section: Damage Formation At T I % T Csupporting

confidence: 53%

“…For lighter ions a significantly higher energy density has to be deposited to obtain the given amount of damage. This is also observed in InP and GaP [47]. And the comparison of damage produced by He and Ar ions in Si or Ge yields the same behaviour [52].…”

Section: Damage Formation At T I ( T Cmentioning

confidence: 70%

“…A and B are free parameters. Available data for T c ; A and B for various III-V semiconductors are summarised in [47]. Remarkable is that the lower limit of T c is successfully correlated with known annealing stages of intrinsic defects in the corresponding crystalline material [48], which -at least to some extent -supports the defect-out-diffusion model.…”

Section: Resultsmentioning

confidence: 91%

“…However, when the correlation between the critical temperature T c and ðN Ã displ Þ 2 j is analysed (see Eq. 14), activation energies E a with E a ¼ Ak B of around 1 eV are obtained [45,47]. Despite the fact that these activation energies are difficult to interpret, since they describe the diffusion of intrinsic defects during the irradiation, the difference between the two differently obtained values is not yet understood.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Mechanisms of damage formation in semiconductors

Wendler

2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Damage Formation At T I % T Csupporting

confidence: 53%

Section: Damage Formation At T I ( T Cmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Mechanisms of damage formation in semiconductors

Wendler

2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…For each of these implantations, the tilt angles were set at 7°and 45°with a precision of ±2°. To avoid amorphization, which occurs at lower thresholds for this implant temperature, 15 the fluences were restricted to 10 13 ions/ cm 2 and 10 12 ions/ cm 2 for P + and As + , respectively.…”

Section: Methodsmentioning

confidence: 99%

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Barba

Aimez

Beauvais

et al. 2004

Journal of Applied Physics

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Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the As outgassing mechanism and the disordering effects induced by ion implantation in Zn-doped GaAs with nominal doping level p =7ϫ 10 18 cm −3 . The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450°C, or after ion implantations carried out at energies of 40 keV with P + , and at 90 and 170 keV with As + . These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from As desorption is clearly observed in samples submitted to RVTA above 300°C, and the depletion layer depths measured in ion implanted GaAs: Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45°during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100 nm in GaAs-based materials.

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Ion‐beam induced effects in multi‐layered semiconductor systems

Wendler

Соболев

Redondo-Cubero

et al. 2016

Physica Status Solidi (b)

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In this article, ion-beam induced effects in multi-layered III-V semiconductor structures are reviewed. Besides doping, important effects occurring during ion irradiation are defect formation and diffusion, amorphisation and intermixing. It is shown that these processes are closely related to each other. In layered systems consisting of group III-phosphides and -arsenides, which can be amorphised by ion implantation, cascade mixing is the dominant mixing mechanism at low temperatures. At a critical temperature, the crystalline structure is retained after implantation and the mixing efficiency may drop down because cascade mixing is more efficient in amorphous semiconductors than in their crystalline counterparts. A further increase of temperature results in an increase of the mixing efficiency due to thermally enhanced processes. Although much less experimental data exist on ion-beam induced effects in layered group III-nitride systems, the results suggest that these systems are not amorphised during ion implantation. In this case, the experimental results can be explained assuming recoil rather than cascade mixing to occur with the former being much weaker than the latter. A few applications of ion implantation of multi-layered semiconductor systems are addressed.

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Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K

Cited by 46 publications

References 41 publications

Mechanisms of damage formation in semiconductors

Mechanisms of damage formation in semiconductors

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Ion‐beam induced effects in multi‐layered semiconductor systems

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