Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Dittrich, Th.; Gonzales, A. J.; Rada, T.; Rissom, T.; Zillner, Elisabeth; Sadewasser, Sascha; Lux‐Steiner, Martha Ch.

doi:10.1016/j.tsf.2012.12.078

Cited by 29 publications

(27 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Modulated surface photovoltage spectra were measured in the configuration of a parallel plate capacitor (quartz cylinder partially coated with the SnO 2 :F electrode, mica sheet as an insulator), in an ambient atmosphere. [ 59 ] The SPV signal is defined as the change in the surface potential as a result of the illumination. Front illumination (light impinging the surface) was provided by a halogen lamp, coupled to a quartz prism monochromator (SPM2) and modulated at a frequency of 8 Hz by using an optical chopper.…”

Section: Methodsmentioning

confidence: 99%

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition

Gottesman

Song

Levine

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

A new method for enhancing the charge separation and photo-electrochemical stability of CuBi 2 O 4 photoelectrodes by sequentially depositing Bi 2 O 3 and CuO layers on fluorine-doped tin oxide substrates with pulsed laser deposition (PLD), followed by rapid thermal processing (RTP), resulting in phasepure, highly crystalline films after 10 min at 650 °C, is reported. Conventional furnace annealing of similar films for 72 h at 500 °C do not result in phasepure CuBi 2 O 4 . The combined PLD and RTP approach allow excellent control of the Bi:Cu stoichiometry and results in photoelectrodes with superior electronic properties compared to photoelectrodes fabricated through spray pyrolysis. The low photocurrents of the CuBi 2 O 4 photocathodes fabricated through PLD/RTP in this study are primarily attributed to their low specific surface area, lack of CuO impurities, and limited, slow charge transport in the undoped films. Bare (without protection layers) CuBi 2 O 4 photoelectrodes made with PLD/RTP shows a photocurrent decrease of only 26% after 5 h, which represents the highest stability reported to date for this material. The PLD/RTP fabrication approach offers new possibilities of fabricating complex metal oxides photoelectrodes with a high degree of crystallinity and good electronic properties at higher temperatures than the thermal stability of glass-based transparent conductive substrates would allow.

show abstract

Section: Methodsmentioning

confidence: 99%

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition

Gottesman

Song

Levine

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…[10][11][12][13][14][15][16][17][18][19][20][21] In particular, Kelvin probe force microscopy (KPFM) has been implemented to probe the electrical characteristics of a variety of PV materials and devices, ranging from organic materials [ 9,[22][23][24] and oxides [ 25 ] to III-V semiconductors for multijunction designs [26][27][28] and polycrystalline thin fi lms. [ 18,[29][30][31][32][33][34][35] The local optoelectronic properties and changes in material composition have also been mapped using near-fi eld scanning optical microscopy (NSOM) probes as local sources of excitation. [36][37][38][39][40][41][42] Very recently, photoluminescence has emerged as a promising tool to map charge recombination [43][44][45] and carriers diffusion [ 46 ] with high spatial resolution.…”

mentioning

confidence: 99%

Nanoimaging of Open‐Circuit Voltage in Photovoltaic Devices

Tennyson

Garrett

Frantz

et al. 2015

Advanced Energy Materials

View full text Add to dashboard Cite

voltage and the overall electrical behavior of a device strongly depend on the nonradiative recombination rate of the charge carriers within a material, which is affected by the defects inherently present within the semiconductor. Despite all the efforts in developing higher performance thin-fi lm polycrystalline solar cells, such as CdTe, CuIn x Ga (1− x ) Se 2 (CIGS), and Cu 2 ZnSnS 4 (CZTS), the difference between the theoretically predicted and the best experimentally achieved V oc is still considerably large (up to 0.6 V). [ 2,3 ] For Si, extensive research has been dedicated to design and implement nanostructured light-trapping architectures to boost light absorption; [4][5][6][7] however, there are very few experiments showing how the V oc is affected. For organic PV blends, the limited V oc observed in most bulk heterojunction solar cells is attributed to geminate and nongeminate losses; [ 8,9 ] nevertheless, local variations in V oc have never been measured. Thus, for any micrometer-and nanoscale structured PV device, assessing variations in V oc with nanoscale resolution and spatially resolving where recombination occurs within the material can potentially change the pathway for designing higher performance devices.Imaging methods based on atomic force microscopy (AFM) techniques have been extensively used to characterize the structural and electrical properties of PV materials and full devices. [10][11][12][13][14][15][16][17][18][19][20][21] In particular, Kelvin probe force microscopy (KPFM) has been implemented to probe the electrical characteristics of a variety of PV materials and devices, ranging from organic materials [ 9,[22][23][24] and oxides [ 25 ] to III-V semiconductors for multijunction designs [26][27][28] and polycrystalline thin fi lms. [ 18,[29][30][31][32][33][34][35] The local optoelectronic properties and changes in material composition have also been mapped using near-fi eld scanning optical microscopy (NSOM) probes as local sources of excitation. [36][37][38][39][40][41][42] Very recently, photoluminescence has emerged as a promising tool to map charge recombination [43][44][45] and carriers diffusion [ 46 ] with high spatial resolution. At low temperature (70 K), photoluminescence imaging with submicrometer resolution has been implemented to map a 10 meV quasi-Fermi level splitting in CIGS solar cells, where variations in the intensity signal were attributed to changes in the material composition. [ 47 ] Nevertheless, none of these imaging techniques provide a direct measurement of V oc within the material at operating conditions. A straightforward, universal, and accurate method to measure the V oc (and hence nonradiative recombination processes) with high spatial resolution in PV materials is still missing.Here, we present a new imaging technique based on illuminated KPFM to map the V oc of optoelectronic devices with nanoscale resolution <100 nm. We map the contact potential difference (CPD) of half or fully processed solar cells in the For most photovoltaic (PV) devices, the...

show abstract

“…109, 073901-1 was directed onto the reference electrode (quartz cylinder partially covered with SnO 2 :F), which was gently pressed on the sample electrode using a cardanic spring. 13 A mica sheet with a thickness of about 30 lm was placed between the reference electrode and the sample surface to form the measurement capacitor. The sample electrode was grounded and connected with the reference electrode via a large resistance (50 GX).…”

mentioning

confidence: 99%

Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

Dittrich

Lang

Shargaieva

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The diffusion or transport lengths of photo-generated charge carriers in CH3NH3PbI3 layers (thickness up to 1 μm) and powders have been directly measured with high accuracy by modulated surface photovoltage after Goodman. The values of the diffusion lengths of photo-generated charge carriers ranged from 200 nm to tenths of μm. In thin CH3NH3PbI3 layers, the transport lengths corresponded to the layer thickness whereas in thicker layers and in crystallites of CH3NH3PbI3 powders the grain size limited the diffusion length. For grains, the diffusion length of photo-generated charge carriers depended on the measurement conditions.

show abstract

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Cited by 29 publications

References 15 publications

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition

Nanoimaging of Open‐Circuit Voltage in Photovoltaic Devices

Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

Contact Info

Product

Resources

About

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Cited by 29 publications

References 15 publications

Pure CuBi2O4 Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi2O3/CuO Grown by Pulsed Laser Deposition

Pure CuBi2O4 Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi2O3/CuO Grown by Pulsed Laser Deposition

Nanoimaging of Open‐Circuit Voltage in Photovoltaic Devices

Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

Contact Info

Product

Resources

About

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition

Pure CuBi₂O₄ Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi₂O₃/CuO Grown by Pulsed Laser Deposition