Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Ivo, Ponky; Glowacki, Arkadiusz; Bahat‐Treidel, Eldad; Lossy, R.; Würfl, Joachim; Boit, Christian; Tränkle, G.

doi:10.1016/j.microrel.2010.09.029

Cited by 30 publications

(17 citation statements)

References 6 publications

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“…This conclusion is consistent with the previously reported time-dependent gen eration of the leakage currents by Marcon et al 15 Mecha nisms that have been proposed for the generation of defect states during device stress include for example oxygen or carbon related centers, 3 but other centers may also be possi ble, such as dislocations 16 or defects generated by piezo electric stress in the high-field region. 17,18 In either case a leakage current path analogous to the percolation paths found in the oxide layer under the gate of a Si metal-oxide semiconductor field-effect transistor 15,19 can, therefore, also occur in AlGaN/GaN HEMTs during device stress as defects accumulate. These defects affect drain current reducing the output power.…”

Section: Or In Generalmentioning

confidence: 99%

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Hodges

Killat

Kaun

et al. 2012

Applied Physics Letters

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Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

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Section: Or In Generalmentioning

confidence: 99%

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Hodges

Killat

Kaun

et al. 2012

Applied Physics Letters

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“…At times, the adverse electrical implications of these additional layers have proven to be a reason for concern, necessitating further scrutiny. In this context, though the ill-effects of the AlGaN buffers in the form of leakage , and trapping , are now relatively well understood and controlled, the suspected association of the AlN nucleation layer with the formation of a conductive channel at the AlN/Si interface is still under debate. Crucially, apart from thermal conductivity, the power loss due to this channel has been alleged to be the remaining bottleneck , for the high-frequency performance (i.e., maximum power gain frequency and power output) of record-breaking GaN-on-Si HEMTs , still lagging behind the devices grown on SiC. , …”

Section: Introductionmentioning

confidence: 99%

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Ghosh

Hinz

Fairclough

et al. 2021

ACS Appl. Electron. Mater.

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The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semiinsulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An ntype layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate.

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“…It is means that evaluation of AlGaN/GaN HEMTs was not only depended on the theory, but it must simulate the operation environment of device to assess by ON-or OFF-state step-stress experiment. This enhance of hot spots may relate to high energetic electron transition through the native detects in the vicinity of the gate [5]. In addition, the hot spots of points (A, B, C) have appeared below 53V (not shown in Fig.2).…”

Section: Resultsmentioning

confidence: 93%

“…Moreover, the change of gate schottky behavior was shown in The light generation at On-state originates from the intra-band transitions of hot carriers in 2DEG [5]. In that way, the distributions of EL signature at each finger are uniform in virgin device.…”

Section: Resultsmentioning

confidence: 96%

Reliability evaluation and failure analysis of AlGaN/GaN high electron mobility transistor by photo emission microscope

Wang

Hong

Zeng

et al. 2013

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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No.110 Dongguanzhuang Rd, GuangZhou, CHN ŵĂŝů͗ĨŽǆƌŽǌϮϬϬϯΛŚŽƚŵĂŝů͘ĐŽŵ ďƐƚƌĂĐƚͲIn this paper, the reliability in AlGaN/GaN HEMTs has been assessed by analyzing the spatial intensity distribution of electroluminescence (EL) detected by Photo Emission Microscope (PEM) during the OFF-state step-stress experiment.And it is found that a relationship between breakdown point and hot spots was confirmed. In addition, we report on the different of EL image before and after failure. Hence, the PEM may as a method to analyze the devices which fail after suffering momentary high voltage.

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Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Cited by 30 publications

References 6 publications

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Reliability evaluation and failure analysis of AlGaN/GaN high electron mobility transistor by photo emission microscope

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