Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

Tsai, Jung‐Hui; Lin, Pao-Sheng; Liou, Syuan-Hao; Niu, Jing-Shiuan

doi:10.1134/s1063782619030187

Cited by 2 publications

(3 citation statements)

References 14 publications

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“…The integrated structure of AlGaAs/InGaAs PHEMTs was the same as the devices studied in Ref. 13. First, a mesa structure provided the required isolation to distinguish the D-mode and E-mode devices with the solution of H 3 PO 4 : H 2 O 2 : H 2 O = 1: 1: 20.…”

Section: Dcfl Inverter Structure and Fabricationmentioning

confidence: 99%

“…[10][11][12] Recently, we have demonstrated the improved gate characteristics of the AlGaAs/InGaAs E-mode pseudomorphic HEMTs (PHEMTs) by way of hybrid gate recesses to remove the n-AlAs/i-GaAs/n-AlGaAs virtual channel layers upon 2DEG channels. 13 As compared to the D-mode device, the gate reverse currents are effectively reduced for the E-mode devices with additional gate recess time to remove part of the virtual channel layers. Furthermore, the hybrid gate recesses also enable the gate turn-on voltages to increase.…”

mentioning

confidence: 99%

“…Furthermore, the hybrid gate recesses also enable the gate turn-on voltages to increase. In this article, by using the layer structure and the similar method of hybrid gate recess, 13 we have successfully implemented the monolithic integration of DCFL inverters by combining the E-mode and D-mode PHEMTs on the same chip. In addition, the influence of gate widths of the D-mode devices on inverter logic characteristics is investigated.…”

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confidence: 99%

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Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

Tsai¹,

Lin²,

Lour³

et al. 2019

ECS J. Solid State Sci. Technol.

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In this article, the direct-coupled FET logic (DCFL) inverters are implemented by co-integrated AlGaAs/InGaAs depletion-mode and enhancement-mode pseudomorphic high electron mobility transistors with virtual channel layers, and the inverters with varying gate width of the depletion-mode transistors are demonstrated. The experimental results show that the drain current IDS (mA/mm) and gm (mS/mm) per unit gate width increases as the gate widths of the depletion-mode devices decrease. This is attributed to the fact that the drain current and transconductance values are related to the channel-to-source resistance and the source contact resistance. When the gate width is reduced, the source pad contact area is only slightly changed and the IDS (mA/mm) as well as the transconductance gm (mS/mm) will increase. In addition, it is also observed that for the reduce of the gate width of the depletion-mode devices, the transfer characteristics of the DCFL inverters are steep and shift to the left due to the smaller drain saturation current of the load transistor.

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Section: Dcfl Inverter Structure and Fabricationmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

Tsai¹,

Lin²,

Lour³

et al. 2019

ECS J. Solid State Sci. Technol.

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Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect

Xu,

Wang,

Chen

et al. 2024

JOR

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In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE). The simulation results indicate that the fmax is significantly increased to 889 GHz of G-HEMT from 616 GHz of conventional AlGaAs/InGaAs HEMT (C-HEMT). The the fT is significantly increased to 521 GHz of G-HEMT from 326 GHz of C-HEMT, as well as the IDsat is increased by 64.8% and the BV increases by 37%. In addition, the SEE peak drain current of G-HEMT is dramatically reduced 51%.

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Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

Cited by 2 publications

References 14 publications

Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect

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