Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect
K. Xu,
H. Y. Wang,
E. L. Chen
et al.
Abstract:In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE… Show more
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