Comparative structural study between sputtered and liquid pyrolysis nanocrystaline SnO2

Cirera, Albert; Cornet, A.; Morante, J.R.; Olaizola, Santiago M.; Castaño, E.; Gracia, José

doi:10.1016/s0921-5107(99)00311-6

Cited by 27 publications

(6 citation statements)

References 8 publications

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“…For example, oxygen vacancies increase to keep the charge balance when Co 2+ substitutes In 3+ , and the In 3d peak exhibits a negative shift accordingly [17]. However, when Ga is added to In 2 O 3 , lattice distortion due to differences in ion radius or binding energy change due to structural defects caused during the growth is expected because Ga 3+ keeps a charge balance with In 3+ [18,19]. Meanwhile, the gap between the In 3d 5/2 peak and In 3d 3/2 peak is 7.6 eV regardless of Ga concentration, which corresponds to literature values (∼7.54 eV) extracted from the XPS analysis on In 2 O 3 [15,20].…”

Section: Resultsmentioning

confidence: 99%

The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

Suh

Meyyappan

2012

Nanotechnology

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We have investigated the change in structural and electrical properties of In(2x)Ga(2-2x)O(3) nanowires (x = 1, 0.69 and 0.32) grown with varied indium (In) and gallium (Ga) contents. The as-grown In(2x)Ga(2-2x)O(3) nanowires kept the cubic crystal structure of In(2)O(3) intact even when the atomic percentages of Ga were increased to 31% (x = 0.69) and 68% (x = 0.32) in comparison to the total amount of In and Ga. However, as Ga added to In(2)O(3) structure was substituted with In, the lattice constant decreased and, consequently, the main peaks observed in x-ray diffraction in the direction of (222), (400) and (440) shifted by around ∼0.08°. The average threshold voltage values for the In(2x)Ga(2-2x)O(3) nanowire transistors were -9.9 V (x = 1), -6.6 V (x = 0.67) and -5.6 V (x = 0.32), exhibiting a more positive shift and the sub-threshold slope increased to 0.53 V /dec (x = 1), 0.33 V /dec (x = 0.67) and 0.27 V /dec (x = 0.32), showing an improved switching characteristic with increasing Ga.

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Section: Resultsmentioning

confidence: 99%

The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

Suh

Meyyappan

2012

Nanotechnology

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“…Samples analyzed in this study were treated for 24 minutes at stabilization temperatures ranging from 300 to 1000ºC. More details on this particular samples synthesis and characterization can be found in reference [24]. Table 2 presents the corresponding fitting data of the CL spectra.…”

Section: -Results and Discussionmentioning

confidence: 99%

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Prades

Arbiol

Cirera

et al. 2007

Sensors and Actuators B: Chemical

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Abstract:Defects in SnO 2 nanowires have been studied by cathodoluminescence, and the obtained spectra have been compared with those measured on SnO 2 nanocrystals of different sizes in order to reveal information about point defects not determined by other characterization techniques. Dependence of the luminescence bands on the thermal treatment temperatures and pre-treatment conditions have been determined pointing out their possible relation, due to the used treatment conditions, with the oxygen vacancy concentration. To explain these cathodoluminescence spectra and their behavior, a model based on first-principles calculations of the surface oxygen vacancies in the different crystallographic directions is proposed for corroborating the existence of surface state bands localized at energy values compatible with the found cathodoluminescence bands and with the gas sensing mechanisms. CL bands centered at 1.90 eV and 2.20 eV are attributed to the surface oxygen vacancies 100º coordinated with tin atoms whereas CL bands centered at 2.37 eV and 2.75 eV are related to the surface oxygen vacancies 130º coordinated. This combined process of cathodoluminescence and ab initio calculations is shown to be a powerful tool for nanowire defect analysis. Key words:SnO 2 , CATHODOLUMINESCENCE, NANOSTRUCTURE, NANOWIRE, OXYGEN VACANCY, AB INITIO Manuscript 2 1.-Introduction:Tin dioxide (SnO 2 ) plays a key role in solid state gas sensors [1]. So a lot of experimental work has been done in order to characterize SnO 2 not only from the technological point of view as a sensor of different gases [2] but also from the materials science standpoint [3] so as to achieve improved performances by means of a better knowledge of the synthesized materials. The vacancy defects investigation deserves special attention as they have been clearly related to conductive and sensing properties of metal oxides [2]. This article will deal with the analysis of point defects using cathodoluminescence (CL) spectra of nanostructured SnO 2 , as this technique reveals complementary information about radiative transitions related to these point defects that is not determined by other characterization techniques This experimental procedure is not new. Since the mid-1970s, however, few works have been published presenting the CL spectra of SnO 2 with different morphologies [4,5,6,7]. In all known cases, several bands between 1.9 and 2.6eV have been reported but there still remains some uncertainty on their origin [6]. However, there are no systematic and detailed works considering nanowires and their comparison with nanoparticles of different sizes.On the other hand, first-principles methodologies based on the density functional theory (DFT) now provide precise calculations of the energetic properties of bulk materials and their surfaces in moderate computing times [8]. Consequently, it is attractive to link theoretical findings with unclearly interpreted experimental results in order to attain better materials knowledge with a straightforward technological ...

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“…The thin films are circular, as in the case of S1, S2, and S3 thin films and the particle size increases with the supplied power. Further understanding of microstructural evolution could be achieved considering that the starting material exhibits structural defects which, as proposed by Cirera et al [ 13 ], are related to high oxygen vacancy concentration.…”

Section: Resultsmentioning

confidence: 99%

Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films

Jeong

2018

Scanning

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SnO2 thin films grown directly on the Si substrate had larger average grain sizes as the power intensity increased, but the average grain size of the SnO2 thin films grown in oxygen atmosphere decreased as the power intensity increased. Hall measurement of pure SnO2 thin films showed that the carrier density increased with increasing power. However, upon annealing the SnO2 thin films, the carrier density decreased with increasing power owing to the formation of oxygen vacancies and the SiO2 layer between the Si substrate and SnO2 thin films. The photoluminescence (PL) of the SnO2 thin film grown in the oxygen atmosphere changed, and it was affected by the oxygen defects at the surface and interfaces of the thin film.

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Comparative structural study between sputtered and liquid pyrolysis nanocrystaline SnO2

Cited by 27 publications

References 8 publications

The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films

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Comparative structural study between sputtered and liquid pyrolysis nanocrystaline SnO2

Cited by 27 publications

References 8 publications

The effect of Ga content on In2xGa2−2xO3nanowire transistor characteristics

The effect of Ga content on In2xGa2−2xO3nanowire transistor characteristics

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films

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The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics

The effect of Ga content on In_2xGa_2−2xO₃nanowire transistor characteristics