Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

Kwoka, Monika; Ottaviano, L.; Passacantando, M.; Czempik, G.; Santucci, S.; Szuber, J.

doi:10.1016/j.apsusc.2006.03.066

Cited by 16 publications

(8 citation statements)

References 18 publications

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“…From the depth profiling we determined that carbon is distributed only in the 3 topmost layers (1 nm) because after short ion sputtering it was completely removed from the surface. A more detailed information about the distribution of carbon in L-CVD SnO 2 thin films after ageing will be published elsewhere [18]. Fig.…”

Section: Ex Situ Xps Studiesmentioning

confidence: 99%

XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation

et al. 2005

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Section: Ex Situ Xps Studiesmentioning

confidence: 99%

XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation

et al. 2005

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“…RESULTS AND DISCUSSION The SnO 2 films were investigated using the TCS method. Work function E vac -E F for the SnO 2 surface under investigation amounts to 4.2 ± 0.1 eV, which is in conformity with the available data [15]. The charac teristic spectra of the total current (TC) of the SnO 2 polycrystalline surface are represented by curves 1 in Fig.…”

Section: Methodsmentioning

confidence: 92%

Modification of electronic properties during adsorption of conjugate organic molecules on the surface of polycrystalline SnO2

Komolov

Lazneva

et al. 2012

Tech. Phys.

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The modification of the electronic structure during adsorption of ultrathin copper phthalocyanine (CuPc) and 3, 4, 9, 10 perylene tetracarboxylic dianhydride (PTCDA) coatings on the surface of polycrys talline tin dioxide is traced. Auger electron spectroscopy is employed to find changes in the atomic composi tion of the surface. It is found with the help of low energy electron total current spectroscopy using a testing beam of electrons with energies up to 30 eV that the total current spectra typical of organic films are formed when the thickness of the coating being deposited is 2-7 nm. The formation of an interface layer 1.5-2.0 nm in thickness is detected, in which the intensity of the structure of the total current spectra decreases and the effect of interaction of PTCDA molecules with the SnO 2 surface is manifested.

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“…Third, the Fermi level (E f ) can be determined with the energy gap between valence-band and Fermi level (E vf ), which can be measured from the offset of valence band region of XPS spectrum. 29,30 Figure 8 shows the valence band region of XPS spectra of Sb-SnO 2 and TiO 2 . The position of the VB relative to the surface Fermi level (E vf ) was determined by the intersection of linear fits to the leading edge of the valence band photoemission and the baseline.…”

Section: B Quantification Of the Cbomentioning

confidence: 99%

Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration

Zhang

Mao

2014

Journal of Applied Physics

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In this paper, antimony-doped tin oxide (Sb-SnO2) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO2/TiO2 heterojunction semiconductors were prepared with Sb-SnO2 and TiO2. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO2 and TiO2, Sb-SnO2/TiO2 presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO2/TiO2 composed of Sb-SnO2 with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO2 and TiO2 in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO2 and TiO2 were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO2/TiO2 composed of Sb-SnO2 with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

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Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

Cited by 16 publications

References 18 publications

XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation

XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation

Modification of electronic properties during adsorption of conjugate organic molecules on the surface of polycrystalline SnO2

Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration

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