Comparative material study on RF and DC magnetron sputtered ZnO:Al films

Kluth, O.; Schöpe, G.; Rech, Bernd; Menner, R.; Oertel, Mike; Orgassa, K.; Schock, H.W.

doi:10.1016/j.tsf.2005.07.313

Cited by 120 publications

(38 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The (0002) XRD peak in highly conductive and transparent AZO thin films prepared on glass substrates at temperatures below approximately 200 o C was always observed at higher angles than that in standard ZnO powder, irrespective of the deposition method used. This is consistent with an XRD peak position shift that not only was uncorrelated to the c-axis orientation, but also was attributable mainly to the difference of ion radius between Zn 2+ and Al 3+ , as published previously in many reports [46][47][48]. However, it should be noted that AZO thin films prepared with a higher c-axis orientation exhibited a tendency to have a higher Hall mobility.…”

Section: Influence Of Doped Impurity and Deposition Methods On Electrisupporting

confidence: 91%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

Section: Influence Of Doped Impurity and Deposition Methods On Electrisupporting

confidence: 91%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

“…31 For example, Hüp-kes et al and Kluth et al showed that the amount of oxygen added to the process gas strongly influences film properties. 32,33 Another of these unknown influence factors might be the target alumina concentration ͑TAC͒.…”

Section: Introductionmentioning

confidence: 99%

The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

Berginski

Hüpkes

Schulte

et al. 2007

Journal of Applied Physics

Self Cite

488

275

View full text Add to dashboard Cite

This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized films exhibit high conductivity and transparency, as well as a surface topography with adapted light-scattering properties to induce efficient light trapping in silicon thin-film solar cells. We investigated the influence on the ZnO:Al properties of the amount of alumina in the target as well as the substrate temperature during sputter deposition. The alumina content in the target influences the carrier concentration leading to different conductivity and free carrier absorption in the near infrared. Additionally, a distinct influence on the film growth of the ZnO:Al layer was found. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on alumina content in the target and heater temperature, three different regimes of etching behavior have been identified. Low amounts of target doping and low heater temperatures result in small and irregular features in the postetching surface topography, which does not scatter the light efficiently. At higher substrate temperatures and target doping levels, more regularly distributed craters evolve with mean opening angles between 120° and 135° and lateral sizes of 1–3μm. These layers are very effective in light scattering. In the third regime—at very high substrate temperatures and high doping levels—the postetching surface is rather flat and almost no light scattering is observed. We applied the ZnO:Al films as front contacts in thin-film silicon solar cells to study their light-trapping ability. While high transparency is a prerequisite, light trapping was improved by using front contacts with a surface topography consisting of relatively uniformly dispersed craters. We have identified a low amount of target doping (0.5–1wt%) and relatively high substrate temperatures (about 350–450°C as sputter parameters enabling short-circuit current densities as high as 26.8mA∕cm2 in μc-Si:H pin cells with an i-layer thickness of 1.9μm. Limitations on further improvements of light-trapping ability are discussed in comparison with the theoretical limitations and Monte Carlo simulations presented in the literature.

show abstract

“…Серед таких технологій осадження плівок ZnO як піроліз [9], магнетронне розпилення [10], молекулярно-променева епітаксія [11], імпульсне лазерне осадження [12], хімічне осадження з парової фази [13] варто виділити метод магнетронного розпилення ( МР), який вирізняється наступними перевагами: ( і ) можливістю осадження плівок на холодну підкладку, (іі) високою адгезією плівки до підкладки, (ііі) однорідністю плівок по товщині при їх вирощуванні на великогабаритних підкладках [14]. Раніше досліджувався вплив на властивості легованих алюмінієм плівок ZnO: (і) технологічних параметрів магнетронного осадження ( температура підкладки [15], тиски кисню [16] та аргону [17], потужність магнетрону [18], ( іі) технологічних прийомів осадження (подвійне легування [19], вибір катодної системи [20], створення багатошарових плівок [21,22], підготовки поверхні [23] тощо) та (ііі) термічного відпалу щойно вирощених плівок [24,25].…”

Section: вступunclassified

The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

Evtushenko

Bykov

Klochkov

et al. 2015

PCSS

View full text Add to dashboard Cite

show abstract

Comparative material study on RF and DC magnetron sputtered ZnO:Al films

Cited by 120 publications

References 7 publications

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

Contact Info

Product

Resources

About