Comparative Evaluation of Silicon and Silicon-Carbide Device-Based MMC and NPC Converter for Medium-Voltage Applications

Belkhode, Satish; Rao, P. Krishna; Shukla, Anshuman; Doolla, Suryanarayana

doi:10.1109/jestpe.2021.3103075

Cited by 23 publications

(3 citation statements)

References 39 publications

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“…(3) Since the boundary ranges for f s and φ are obtained, the Binary Numerical Iteration method will be utilized to figured out the specific f s and φ under specified V in . Set a step factor ε 1 for f s and thus 11), ( 15), ( 23), ( 24), (26), and ( 27), two planes f 5 , f 6 consisting of α and γ can be obtained as ( 56) and (57). Taking each discretized f s in step (3) into (56) and (57), the numerical solution for α and γ could be figured out, so that the numerical solutions for f s and φ under specified V in could be further deduced.…”

Section: Vfaps Design Proceduresmentioning

confidence: 99%

“…In [25], an asymmetrical cascaded H-bridge (CHB) is proposed to reach high power levels and high reliability at the advantage of its modular and faulttolerant features, whereas CHB requires isolated DC links, which is not suitable for PPU. In [26], a comparison between a modular multilevel converter (MMC) and NPC is proposed in the medium-voltage application. It is concluded that MMC performs more balanced power losses and less harmonics due to its scalable structure.…”

Section: Introductionmentioning

confidence: 99%

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A High Step-Down SiC-Based T-Type LLC Resonant Converter for Spacecraft Power Processing Unit

Ma,

2024

Aerospace

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A spacecraft power processing unit (PPU) is utilized to convert power from solar arrays or electric batteries to the payload, including electric propulsion, communication equipment, and scientific instruments. Currently, a high-voltage converter is widely applied to the spacecraft PPU to improve power density and save launch weight. However, the high voltage level poses challenges such as high step-down ratios and high power losses. To achieve less conduction loss, a SiC-based T-type three-level (TL) LLC resonant converter is proposed. To further broaden the gain range and achieve high step-down ratios, a variable frequency and adjustable phase-shift (VFAPS) modulation scheme is proposed. Meanwhile, the steady-state time-domain model is established to elaborate the operation principles and boundary conditions for soft switching. Furthermore, the optimal resonant element design considerations have been elaborated to achieve wider gain range and facilitate easier soft switching. Furthermore, the numerical solutions for switching frequency and phase shift (PS) angle under each specific input could be figured out. Finally, the effectiveness of this theoretical analysis is demonstrated via a 500-W experimental prototype with 650∼950-V input and constant output of 48-V/11-A.

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Section: Vfaps Design Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A High Step-Down SiC-Based T-Type LLC Resonant Converter for Spacecraft Power Processing Unit

Ma,

2024

Aerospace

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“…For MV converters, 10 kV SiC MOSFETs are substituting their 6.5 kV Si IGBT counterparts due to inherent superiority [8] , meanwhile offering system benefits of higher efficiency, higher switching frequency, high-density, topology simplification, and high control bandwidth. Consequently, if the power cell's (submodule's) kernel piece is SiC MOSFET, design will be able to meet high-density and efficiency, as shown in the lastest SiC MOSFET-based MMC converters [9][10][11] .…”

mentioning

confidence: 99%

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Mocevic

Fan

et al. 2022

iEnergy

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Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.

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A simplified dual-stage model predictive controller for modular multilevel converters

Chakraborty

Gajare

Chaki

et al. 2023

Electric Power Systems Research

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Comparative Evaluation of Silicon and Silicon-Carbide Device-Based MMC and NPC Converter for Medium-Voltage Applications

Cited by 23 publications

References 39 publications

A High Step-Down SiC-Based T-Type LLC Resonant Converter for Spacecraft Power Processing Unit

A High Step-Down SiC-Based T-Type LLC Resonant Converter for Spacecraft Power Processing Unit

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

A simplified dual-stage model predictive controller for modular multilevel converters

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