Comparative analysis of void-containing and all-semiconductor 1.5 <i>µ</i>m InP-based photonic crystal surface-emitting laser diodes

Bian, Zijun; Rae, Katherine J.; King, Ben C.; Kim, D.; Li, G.; Thoms, S.; Childs, David; Gerrard, Neil D.; Babazadeh, N.; Reynolds, Paul; Grant, James P.; McKenzie, Adam F.; Orchard, Jonathan R.; Taylor, Richard J. E.; Hogg, Richard A.

doi:10.1063/5.0053535

Cited by 6 publications

(1 citation statement)

References 25 publications

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“…QDs emit highly linearly polarized light at telecommunication wavelengths with spectral linewidths below 50 μeV. In 2021, Bian et al performed a comparative simulation study of void-containing and all-semiconductor PhC surface-emitting lasers with square lattices and round atoms [ 127 ]. They demonstrate that the void-containing structure can achieve a higher coupling coefficient than the all-semiconductor structure.…”

Section: Challenge and Future Directionmentioning

confidence: 99%

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

et al. 2022

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Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people’s health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

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Section: Challenge and Future Directionmentioning

confidence: 99%

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

et al. 2022

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Continuous-wave operation of 1550 nm low-threshold triple-lattice photonic-crystal surface-emitting lasers

Wang,

Liu,

Wang

et al. 2024

Light Sci Appl

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Benefitting from narrow beam divergence, photonic crystal surface-emitting lasers are expected to play an essential role in the ever-growing fields of optical communication and light detection and ranging. Lasers operating with 1.55 μm wavelengths have attracted particular attention due to their minimum fiber loss and high eye-safe threshold. However, high interband absorption significantly decreases their performance at this 1.55 μm wavelength. Therefore, stronger optical feedback is needed to reduce their threshold and thus improve the output power. Toward this goal, photonic-crystal resonators with deep holes and high dielectric contrast are often used. Nevertheless, the relevant techniques for high-contrast photonic crystals inevitably complicate fabrication and reduce the final yield. In this paper, we demonstrate the first continuous-wave operation of 1.55 μm photonic-crystal surface-emitting lasers by using a ‘triple-lattice photonic-crystal resonator’, which superimposes three lattice point groups to increase the strength of in-plane optical feedback. Using this geometry, the in-plane 180° coupling can be enhanced threefold compared to the normal single-lattice structure. Detailed theoretical and experimental investigations demonstrate the much lower threshold current density of this structure compared to ‘single-lattice’ and ‘double-lattice’ photonic-crystal resonators, verifying our design principles. Our findings provide a new strategy for photonic crystal laser miniaturization, which is crucial for realizing their use in future high-speed applications.

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Resonator embedded photonic crystal surface emitting lasers

Bian,

Zhao,

Liu

et al. 2024

npj Nanophoton.

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The finite size of 2D photonic crystals results in them being a lossy resonator, with the normally emitting modes of conventional photonic crystal surface emitting lasers (PCSELs) differing in photon lifetime via their different radiative rates, and the different in-plane losses of higher order spatial modes. As a consequence, the fundamental spatial mode (lowest in-plane loss) with lowest out-of-plane scattering is the primary lasing mode. For electrically driven PCSELs, as current is increased, incomplete gain clamping results in additional spatial (and spectral) modes leading to a reduction in beam quality. A number of approaches have been discussed to enhance the area (power) scalability of epitaxy regrown PCSELs through careful design of the photonic crystal atom1–3. None of these approaches tackle the inflexibility in being unable to independently modify the photon lifetime of the different modes at the Γ2 point. As a method to introduce design flexibility, resonator embedded photonic crystal surface emitting lasers (REPCSELs) are introduced. This device, combining comparatively low coupling strength photonic crystal structures along with perimeter mirrors, allow a Fabry–Pérot resonance effect to be realised that provides wavelength selective modification of the photon lifetime. We show that surface emission of different surface emitting modes may be selectively enhanced, effectively changing the character of the modes at the Γ2 point. This is a consequence of the selective modification of in-plane loss for particular modes, and is dependent upon the alignment of the photonic crystal (PhC) band-structure and distributed Bragg reflectors’ (DBRs) reflectance spectrum. These findings offer new avenues in surface emitting laser diode engineering. The use of DBRs to reduce the lateral size of a PCSEL opens the route to small, low threshold current (Ith), high output efficiency epitaxy regrown PCSELs for high-speed communication and power sensitive sensing applications.

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Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

Cited by 6 publications

References 25 publications

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Continuous-wave operation of 1550 nm low-threshold triple-lattice photonic-crystal surface-emitting lasers

Resonator embedded photonic crystal surface emitting lasers

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