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We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.

A key benefit of photonic crystal surface emitting lasers (PCSELs) is the abillity to increase output power through scaling the emission area while mainting high quality single mode emission, allowing them to close the brightness gap which exists between semiconductor lasers and gas and fibre lasers. However, there are practical limits to the size, and hence power, of an individual PCSEL device and there are trade-offs between single-mode stability and parasitic in-plane losses with increasing device size. In this paper we discuss 2D coherent arrays as an approach to area and coherent power scaling of PCSELs. We demonstrate in two and three element PCSEL arrays an increase in the differential efficiency of the system due to a reduction in in-plane loss.

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