Comparative Analysis of the Crosstalk Effects in Multilayer Graphene Nanoribbon and MWCNT Interconnects in Sub-10 nm Technologies

Hamedani, Soheila Gharavi; Moaiyeri, Mohammad Hossein

doi:10.1109/temc.2019.2903567

Cited by 36 publications

(31 citation statements)

References 42 publications

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“…Hence, power dissipation is more severe in the case of the resistive driver in comparison to a CNTFET driver. Moreover, the result of power dissipation obtained for the proposed MCB interconnect is correlated with the simulation result obtained by the other authors in [32, 33] in Table 5. It is observed that the proposed model outperformed by 99.55 and 44.37% in terms of power dissipation as compared to the other research work given in [32, 33], respectively.…”

Section: Performance Analysissupporting

confidence: 83%

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Kumbhare

Paltani

Majumder

2020

IET Circuits, Devices & Systems

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Section: Performance Analysissupporting

confidence: 83%

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Kumbhare

Paltani

Majumder

2020

IET Circuits, Devices & Systems

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“…where the p.u.l. scattering resistance (r s,MLGNR ) of a single layer of GNR [12,18] is calculated using Equation (6b), as…”

Section: Resistance Modelmentioning

confidence: 99%

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Kaur

Gupta

Kumar

et al. 2021

IET Circuits, Devices & Syst

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A comparative radio-frequency (RF) and crosstalk analysis is performed on carbon nanointerconnects based on an efficient π-type equivalent single-conductor model of bundled multiwall carbon nanotubes (MWCNTs) and stacked multilayer graphene nanoribbons (MLGNRs). Simulation results are extracted using HSPICE for global-level nanointerconnects at the 14-nm node. RF performance is evaluated in terms of skin depth and a 3-dB bandwidth, while crosstalk performance is analysed in terms of crosstalk-induced delay and average power consumption. The skin-depth results indicate significant improvements in skin-depth degradation at higher frequencies for AsF 5-doped zigzag MLGNRs compared with that of Cu, nanotubes and MWCNTs. The transfer gain results explicitly demonstrate that AsF 5-doped MLGNRs exhibit excellent RF behaviour, showing 10-and 20-fold improvements over MWCNTs and copper (Cu), respectively. Further, the 3-dB bandwidth calculations for AsF 5-doped MLGNRs suggest 18.6-and 9.7-fold enhancement compared with Cu and MWCNTs at 1000 μm. Significant reductions are obtained in crosstalk-induced out-of-phase delays for AsF 5-doped MLGNRs-their delay values were 84.7% and 60.24% less than those for Cu and MWCNTs. Further, AsF 5-doped MLGNRs present the most optimal energy-delay product results, with values representing 98.6% and 99.6% improvements over their Cu and MWCNT counterparts at a global length of 1000 µm. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The Ce is usually due to electric field coupling between bottommost layer and the ground plane. The Cq and Ce capacitances for MLGNR interconnects [28][29] is estimated using (13) and (14) as…”

Section: Capacitance Modelmentioning

confidence: 99%

RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime

Kaur

Kumar

Raj

et al. 2021

Preprint

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This paper presents RF and crosstalk analysis of Copper (Cu) and multi-layer Graphene nanoribbon (MLGNR) based interconnects using Fin field-effect transistor (FinFET) and virtual-source carbon nanotube field effect transistor (CNFET) based repeater insertions in sub-10 nm regime. The SPICE based analysis utilizes an accurate π-type equivalent single conductor (ESC) model for mutually coupled interconnects at 7 nm technology node. The transfer function and 3-dB bandwidth results of lithium-doped MLGNRs offer many fold improved RF performance than Cu. The out-of-phase crosstalk induced (OPXT) delay results with FinFET repeaters demonstrate 27.54 and 67.6 % reductions for pristine and lithium-doped MLGNRs as compared to Cu, whereas CNFET repeaters demonstrate 20.48 and 81.88 % reductions at interconnect length of 1000 µm. The peak far-end crosstalk (FEXT) noise voltage results demonstrate 86.03 and 62.5 % using FinFET repeaters and 88.14 and 69.9 % reductions using CNFET repeaters for pristine and Li-doped MLGNRs than Cu at 1000 µm length. Further, the energy-delay-product (EDP) results demonstrate 59.7 and 97 % reductions using FinFET repeaters for pristine and Li-doped MLGNRs than Cu at length of 1000 µm. The EDP results using CNFET repeaters exhibit 34 % degradations for pristine-MLGNRs than Cu while Li-MLGNR exhibit 98.61% reductions than Cu at length of 1000 µm.

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Comparative Analysis of the Crosstalk Effects in Multilayer Graphene Nanoribbon and MWCNT Interconnects in Sub-10 nm Technologies

Cited by 36 publications

References 42 publications

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime

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