RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime

Abstract

This paper presents RF and crosstalk analysis of Copper (Cu) and multi-layer Graphene nanoribbon (MLGNR) based interconnects using Fin field-effect transistor (FinFET) and virtual-source carbon nanotube field effect transistor (CNFET) based repeater insertions in sub-10 nm regime. The SPICE based analysis utilizes an accurate π-type equivalent single conductor (ESC) model for mutually coupled interconnects at 7 nm technology node. The transfer function and 3-dB bandwidth results of lithium-doped MLGNRs offer many fold improved RF performance than Cu. The out-of-phase crosstalk induced (OPXT) delay results with FinFET repeaters demonstrate 27.54 and 67.6 % reductions for pristine and lithium-doped MLGNRs as compared to Cu, whereas CNFET repeaters demonstrate 20.48 and 81.88 % reductions at interconnect length of 1000 µm. The peak far-end crosstalk (FEXT) noise voltage results demonstrate 86.03 and 62.5 % using FinFET repeaters and 88.14 and 69.9 % reductions using CNFET repeaters for pristine and Li-doped MLGNRs than Cu at 1000 µm length. Further, the energy-delay-product (EDP) results demonstrate 59.7 and 97 % reductions using FinFET repeaters for pristine and Li-doped MLGNRs than Cu at length of 1000 µm. The EDP results using CNFET repeaters exhibit 34 % degradations for pristine-MLGNRs than Cu while Li-MLGNR exhibit 98.61% reductions than Cu at length of 1000 µm.