Comparative analysis of light trapping GaN nanohole and nanorod arrays for UV detectors

Abstract

In this paper, based on the excellent light trapping performance of the nanostructure, the structure of the electron emission layer of the ultraviolet detector is optimized. In this paper, simulation models of gallium nitride (GaN) nanohole arrays and nanorod arrays are designed by COMSOL Multiphysics software, which is based on the finite element method (FEM). In order to optimize the geometric parameters of GaN nanohole and nanorod arrays, and understand the influence of polarized light on them, the light absorption performance in the ultraviolet (UV) band has been fully analyzed. We found that when the lattice constant ranges from 200 to 500 nm, the GaN nanohole array and the GaN nanorod array have extreme absorptivity. And when the incident light has an inclination of 20°, the light trapping performance of the nanohole array can be further improved. GaN nanostructures with high light trapping capabilities will help improve the photoelectric emission efficiency of GaN photocathode and provide design reference for UV detectors with excellent performance.

Optical performance analysis of InP nanostructures for photovoltaic applications

“…The average of absorptance is calculated by taking the mean of the absorptance in both modes. Absorptance 66 as a function of wavelength λ is defined as: A ( λ ) = 1 − R ( λ ) − T ( λ ) where R ( λ ) and T ( λ ) are the reflectance and transmittance obtained from port 2 and port 1 respectively as depicted in Fig. 1(a) and λ is the wavelength that is swept from 300 nm to the cutoff wavelength of the material taken.…”

“…We must set the maximum mesh element size to λ /8 or less than the lowest simulated wavelength. 66 In our work, we have chosen swept mesh for the PML region and tetrahedral for the remaining region where the active material is set with finer mesh and the remaining region is set with coarse mesh element type as shown in Fig. 1(b) .…”

Comparative optical analysis of GaAs nanostructures for photovoltaic applications using finite element method

“…User-controlled mesh is used for the whole geometry, as shown in figure 2. The maximum and minimum element size for the meshing is chosen to be of 50 nm and 2 nm, respectively as specified in [45]. A free tetrahedral mesh is defined for the physics domain (includes air and device region) and a sweep meshing sequence is used in the PML region.…”

Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Al Nanoparticles in 4H-SiC Microholes

“…However, 4H-SiC PDs suffered from low responsivity and quantum efficiency properties because of the low UV light absorption efficiency. In recent years, in order to further improve the performance of PDs, many methods had been used to improve the absorption efficiency including antireflection film, semitransparent electrode, microlens, nanowires, nanoholes, and nanorods. , Microhole (MH) structure also has attracted much attention due to its facile preparation and high specific surface area under light conditions. Naderi et al investigated the MH formation of electrochemical corrosion SiC to enhance the detector performance .…”