Comparative analysis of amorphous silicon and silicon nitride multilayer by spectroscopic ellipsometry and transmission electron microscopy

Serényi, Miklós; Lohner, T.; Petrik, P.; Frigeri, C.

doi:10.1016/j.tsf.2006.10.137

Cited by 27 publications

(14 citation statements)

References 13 publications

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“…The maximum shifts to shorter wavelength with the increase of Mg content (blue shift). This same behavior has also been observed in different materials [124][125][126]. The inset in Fig.…”

Section: Compositessupporting

confidence: 85%

Ellipsometry and Its Applications in Stoichiometry

Zheng¹,

Zhang²,

Chen³

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…The maximum shifts to shorter wavelength with the increase of Mg content (blue shift). This same behavior has also been observed in different materials [124][125][126]. The inset in Fig.…”

Section: Compositessupporting

confidence: 85%

Ellipsometry and Its Applications in Stoichiometry

Zheng¹,

Zhang²,

Chen³

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…The refractive index and extinction coefficient for the a-Al 2 O 3 , Er 3+ -doped and buffer layers were assumed to be the ones of a-Al 2 O 3 as determined from ellipsometry measurements in a previous work [10], and the optical properties of amorphous silicon were determined from spectroscopic ellipsometry on a a-Si film grown by PLD at room temperature. The spectral behaviour of the measured optical constants is similar to that reported in the literature for a-Si [11][12][13], the only significative difference being that the measured refractive index takes slightly lower values than those reported: 3.8 compared to values ranging from 4.2 to 5 at 514.5 nm. The evolution of the calculated reflectance as a function of t Si , t Er-doped and t buffer is presented in Fig.…”

Section: Film Structuresupporting

confidence: 85%

Enhanced photoluminescence of nanostructured Er3+-doped a-Si/a-Al2O3 thin films prepared by PLD

Toudert

Núñez-Sánchez

Serna

et al. 2008

Materials Science and Engineering: B

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“…Ellipsometry offers great promise for characterization, monitoring, and control of a wide variety of processes, especially in semiconductor related areas [1][2][3][4][5][6][7][8][9][10][11][12] …”

Section: Spectroscopic Ellipsometry (Se) In Photovoltaicsmentioning

confidence: 99%

Expanded beam spectro-ellipsometry for big area on-line monitoring

et al. 2015

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Non-destructive analysing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. An important focus is to express the dielectric functions of each component material in terms of a handful of wavelength independent parameters whose variation can cover all process variants of that material. With the resulting database, spectroscopic ellipsometry coupled with multilayer analysis can be developed for on-line point-by-point mapping and on-line line-by-line imaging. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels or big area (even 450 mm diameter) Si-wafers in developing labs but it is slow in the on-line mode when only 15 points can be obtained (within 1 min) as a 120 cm long panel moves by the mapping station. Last years [M. Fried et al, Thin Solid Films 519, 2730], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Earlier a single 30 point line image could be collected in 10 s over a 15 cm width of PV material. Recent years we have built a 30, a 45 and a 60 cm width expanded beam ellipsometer which speed is increased by 10x. Now, 1800 points can be mapped in a 1 min traverse of a 60*120 cm PV panel or flexible roll-to-roll substrate.

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Comparative analysis of amorphous silicon and silicon nitride multilayer by spectroscopic ellipsometry and transmission electron microscopy

Cited by 27 publications

References 13 publications

Ellipsometry and Its Applications in Stoichiometry

Ellipsometry and Its Applications in Stoichiometry

Enhanced photoluminescence of nanostructured Er3+-doped a-Si/a-Al2O3 thin films prepared by PLD

Expanded beam spectro-ellipsometry for big area on-line monitoring

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