volume 146, issue 1-3, P141-145 2008
DOI: 10.1016/j.mseb.2007.07.025
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Abstract: Enhancement of the 1540 nm emission in nanostructured Er 3+ -doped a-Si/a-Al 2 O 3 thin films prepared by pulsed laser deposition is studied. This paper is focused on a symmetric film structure formed by a central Er 3+ -doped Al 2 O 3 layer sandwiched between two a-Si layers, which are isolated from the silicon substrate and the ambient medium by non-doped Al 2 O 3 buffer layers. The layer thicknesses have been chosen in order to minimize the reflectance of the film at the pumping wavelength of 514.5 nm and …

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