2017
DOI: 10.1109/led.2017.2739186
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Compact On-Chip Bandpass Filter With Improved In-Band Flatness and Stopband Attenuation in 0.13- $\mu \text{m}$ (Bi)-CMOS Technology

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Cited by 51 publications
(33 citation statements)
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“…1. In addition, the height of the silicon substrate is 200 µm [12], [26], [27]. The dielectric constant of SiO2 is 4.1 and the loss tangent is 0.01.…”
Section: A the Presented Electromagnetic Structurementioning
confidence: 99%
“…1. In addition, the height of the silicon substrate is 200 µm [12], [26], [27]. The dielectric constant of SiO2 is 4.1 and the loss tangent is 0.01.…”
Section: A the Presented Electromagnetic Structurementioning
confidence: 99%
“…As illustrated in Figure , the proposed balun BPF has exhibited good balanced performance in both simulation and measurement, and it has an amplitude imbalance better than 0.08 dB and a phase imbalance better than 4.9° over a wide band frequency range. Herein, it should be pointed out that the proposed wideband balun can be alternatively implemented on coplanar stripline (CPS), LTCC substrate, IPD‐, and IC‐based solutions …”
Section: Experimental Verification Of Proposed Wideband Balun Filter mentioning
confidence: 99%
“…Herein, it should be pointed out that the proposed wideband balun can be alternatively implemented on coplanar stripline (CPS), 11 LTCC substrate, 12 IPD-, and IC-based solutions. [13][14][15][16] 5 | CONCLUSIONS In this article, a novel conception for realizing a class of wideband balun filters have been proposed and implemented on SLR with good filtering response, good imbalance amplitude and phase performance over a wideband frequency range. After the working principle of the proposed balun filter is well described, its final layout is designed, manufactured, tested.…”
Section: Experimental Verification Of Proposed Wideband Balun Filtementioning
confidence: 99%
“…However, a slow-wave structure is adopted for a design, the footprint of a passive component operating below 60 GHz is still fairly large. To solve this issue, a hybrid approach that utilizes capacitive-loaded TLs or INDs has been extensively used in [21]- [26] Since metal-insulator-metal (MIM) layer is provided for the most RF-CMOS process and MIM capacitor can be implemented in a very compact way, a combination of using a relatively large capacitance with a small inductance to obtain the required resonant frequency is desirable.…”
Section: Introductionmentioning
confidence: 99%