Compact MOS-triggered SCR with faster turn-on speed for ESD protection

Song, Bo; Han, Yan; Su, Dong; Ma, Fei; Li, Mingliang; Miao, Meng; Zhu, Kun

doi:10.1016/j.microrel.2010.07.112

Cited by 6 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The continous scaling down of integrated circuits (ICs) has made electrostatic discharge (ESD) protection critical and challenging [1][2][3][4][5]. A diode-triggered silicon controlled rectifier (DTSCR) can be used for ESD protection owing to its adjustable trigger voltage and lower parasitic capacitor [6][7][8][9][10][11][12][13]. However, its large turn-on time limits its application in the high-speed protection, particularly under a charged-device model (CDM) ESD event.…”

Section: Introductionmentioning

confidence: 99%

Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

Zhang

Wang

et al. 2019

Sci. China Inf. Sci.

View full text Add to dashboard Cite

A conventional diode-triggered silicon-controlled rectifier (DTSCR) structure with a layout strategy for electrostatic discharge (ESD) protection is presented and confirmed in a 65-nm CMOS technology. The modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing (TLP)/very fast transmission line pulsing (VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model (CDM) event. Keywords diode triggered silicon controlled rectifier (DTSCR), electrostatic discharge (ESD), transmission line pulsing (TLP), very fast transmission line pulsing (VF-TLP), turn-on behavior Citation Zhang L Z, Wang Y, Wang Y Z, et al. Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection.

show abstract