Analysis of gate-coupled silicon controlled rectifier on HBM protection under voltage overshoot

Madhusoodhanan, Syam; Sankaralingam, R.; Boselli, Gianluca; Zhong, Chen

doi:10.1016/j.elstat.2019.103394

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“…In recent research, gate structures are widely used to improve the ESD performance of SCR structures [28][29][30]. It gives us inspiration that we can use the gate structure to create a novel discharging mechanism to increase the holding voltage of the traditional SCR structure.…”

Section: Introductionmentioning

confidence: 99%

Analysis of current aggregation in gate-control dual direction silicon controlled rectifier

Zhong

Wang

Jin

et al. 2021

IEICE Electron. Express

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The current aggregation mechanism created by the gate structure is proposed for electrostatic discharging (ESD). Through device simulation, the size-expanded gate structure in gate-control dual-direction silicon controlled rectifier (GC-DDSCR) is found to aggregate the surface parasitic current path and the main SCR current path. The SCR current path is consequently twisted and extended to increase the holding voltage (Vh). Two GC-DDSCRs are fabricated in a 0.5μm CMOS technology and tested by transmission line pulse (TLP). The Vh increases from 13.84V to 16.44V as the gate size expands from 2.5μm to 4.5μm. The mechanism of current aggregation is verified.

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Section: Introductionmentioning

confidence: 99%