J Comput Electron
 2017
DOI: 10.1007/s10825-017-1067-7
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Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs

N. Kermas
1
,
B. Djellouli
2
,
Driss Bouguenna
3
et al.
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