Compact modeling of I-V characteristics in irradiated MOSFETs: Impact of operation temperature and interface traps

Орлов, В. В.; Felitsyn, Vladislav A.; Зебрев, Г. И.

doi:10.1109/radecs.2016.8093119

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…Figures 1(a) and 1(b) show experimental and simulated drain currents of the unirradiated long-channel n-MOSFETs measured as functions of the gate voltage at different temperatures [23].A set of experimental I-V characteristics at different measurement temperatures exhibits a pretty typical common point of intersection for not very wide temperature range. The origin of this point has no fundamental reasons and can be explained by the temperature-dependent shift of threshold voltage and decreasing in mobility [24,25].…”

Section: I-v Model Validationmentioning

confidence: 99%

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

Зебрев

Орлов

Bakerenkov

et al. 2017

IEEE Trans. Nucl. Sci.

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We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated longchannel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities. The model allows simulating of the off-state and the on-state drain currents of irradiated MOSFETs based on an equal footing. Particularly, a novel compact model of the rebound effect in the n-MOSFETs was employed for simulation of the total dose dependencies of drain currents in the highly scaled 60 nm node circuits irradiated up to 1Grad. Compatibility of the model parameter set with BSIM and a single closed form of the model equation imply the possibility of its easy implementation into the standard CAD tools.

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Section: I-v Model Validationmentioning

confidence: 99%

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

Зебрев

Орлов

Bakerenkov

et al. 2017

IEEE Trans. Nucl. Sci.

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“…The relationship between device bias and radiation-induced degradation is well-studied, and can be briefly summarized as an electrostatic potential across a dielectric region causing less recombination of radiation-induced electron/hole (e/h) pairs [11]. The electrostatic forces combined with vast differences in oxide carrier mobilities results in an increase of trapped charges that is directly dependent on the electric field, oxide type, and oxide thickness [12]. It is an accumulation of these trapped charges inside microelectronics that causes the gradual degradation of device performance as a function of TID, ultimately resulting in permanent failure of the device.…”

Section: B Device Physics and Bias Conditionmentioning

confidence: 99%

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Holliday

Heuser

Manchester

et al. 2022

IEEE Trans. Aerosp. Electron. Syst.

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The survivability of microelectronic devices in ionizing radiation environments drives spacecraft design, capability, mission scope, and cost. This work exploits the periodic nature of many space radiation environments to extend device lifetimes without additional shielding or modifications to the semiconductor architecture. We propose a technique for improving component lifetimes through reduced total-dose accumulation by modulating device bias during periods of intense irradiation. Simulation of this "dynamic biasing" technique applied to singletransistor devices in a typical low-Earth orbit results in an increase of component life from 114 days to 477 days (318% improvement) at the expense of 5% down time (95% duty cycle). The biasing technique is also experimentally demonstrated using gamma radiation to study three commercial devices spanning a range of integrated circuit complexity in 109 rad/min and 256 rad/min dose rate conditions. The demonstrated improvements in device lifetimes using the proposed dynamic biasing technique lays a foundation for more effective use of modern microelectronics for space applications. Analogous to the role real-time temperature monitoring plays in maximizing modern processor performance, the proposed dynamic biasing technique is a means of intelligently responding to the radiation environment and capable of becoming an integral tool in optimizing component lifetimes in space.

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“…The dependence of on temperature is shown in Fig. (15), from which it is clearly shown that for drain-source junction, value increased from the initial value of -0.6 up-to 0 on increasing the temperature from 25 C to 135 C. On the other hand, for gate-drain and gate-sourcejunctions, values decreased from the initial values of -2.8 and -5.5 down-to -3.8 and -6.5 at 25 C and 135 C, respectively.…”

Section: Metal Oxide Field Effect Transistormentioning

confidence: 99%

Temperature Effects on the Electrical Characteristics of BJTs and MOSFETs

Ibrahim

El-Azeem

El‐Ghanam

et al. 2019

Journal of Scientific Research in Science

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The aim of the present paper is to shed further light on studying the temperature effects on the static (I-V) and dynamic (C-V) characteristics of bipolar junction-and metal oxide field effect -transistors. In this concern, several parameters were plotted at different temperature levels. The experimental results showed that, for the bipolar junction transistor 2SC2120, a noticeable increase in the collector current and the current gain from 0.198 A and 0.14 up-to 0.25 A and 0.24 by increasing the temperature from 25ºC and 135ºC, respectively. Considering the threshold voltage, its value was shown to be decreased from 0.62 Volt to 0.42 Volt within the same temperature range. In addition, from the traced dynamic characteristics of the same BJT, the diffusion capacitance of the emitter-base junction, as an example, increased from 10.11 nF up-to 45.09 nF by increasing the temperature up-to 135 ºC. On the other hand, for metal oxide field effect transistor 2N6660, the static characteristics showed that a noticeable decrease in the drain current and the forward trans-conductance from 1.2A and 5.0 Ω -1 down-to 0.79 A and 1.9 Ω -1 , respectively, due to temperature increasing from 25 ºC up-to 135 ºC. While the threshold voltage was hold constant. Finally, the reverse capacitance of the gate-drain junction was shown to be increases from 41.48 pF up-to 47.31 pF within the same range of temperature.

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Compact modeling of I-V characteristics in irradiated MOSFETs: Impact of operation temperature and interface traps

Cited by 9 publications

References 13 publications

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Temperature Effects on the Electrical Characteristics of BJTs and MOSFETs

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