The aim of the present paper is to shed further light on studying the temperature effects on the static (I-V) and dynamic (C-V) characteristics of bipolar junction-and metal oxide field effect -transistors. In this concern, several parameters were plotted at different temperature levels. The experimental results showed that, for the bipolar junction transistor 2SC2120, a noticeable increase in the collector current and the current gain from 0.198 A and 0.14 up-to 0.25 A and 0.24 by increasing the temperature from 25ºC and 135ºC, respectively. Considering the threshold voltage, its value was shown to be decreased from 0.62 Volt to 0.42 Volt within the same temperature range. In addition, from the traced dynamic characteristics of the same BJT, the diffusion capacitance of the emitter-base junction, as an example, increased from 10.11 nF up-to 45.09 nF by increasing the temperature up-to 135 ºC. On the other hand, for metal oxide field effect transistor 2N6660, the static characteristics showed that a noticeable decrease in the drain current and the forward trans-conductance from 1.2A and 5.0 Ω -1 down-to 0.79 A and 1.9 Ω -1 , respectively, due to temperature increasing from 25 ºC up-to 135 ºC. While the threshold voltage was hold constant. Finally, the reverse capacitance of the gate-drain junction was shown to be increases from 41.48 pF up-to 47.31 pF within the same range of temperature.
The paper presents a study on the effect of diode power losses on the operation of 5/24.4 VDC boost converter based on MOSFET switch type STP36NF06. In this concern, a comparative study between the system performances in the discontinuous conduction mode was carried out whenever; MBRS130LT3G Schottky diode and FR101 fast recovery diode were applied. It was found that, the boost converter output voltage was 20.0 Volts with voltage ripple of 1.4 Volts, using MBRS130LT3G Schottky diode. Moreover, the output voltage reached 18.6 Volts with voltage ripple of 1.6 Volts, whenever FR101 fast recovery diode was used. On the other hand, the peak ringing voltage and parasitic ringing values at the switch node were 4.8 Volts and 454 kHz, respectively applying Schottky diode. While, their values were 8.0 Volts and 463.1 kHz applying fast recovery diode.
The present paper focuses on the investigation and improvement of the electrical performance of photovoltaic mono-crystalline silicon solar cells. Where, temperature effect was studied in details, where cells loss were observed, analyzed, and several trials to reduce its value were investigated applying passive and active aluminum heat sinks. Also, introduction of thermoelectric generators was proved to pronouncedly enhance the cells performances. The dependences of the opencircuit voltage, maximum output power, short-circuit current, and power conversion efficiency on temperature were observed. Where, their values were reported to be in the order of-2.3 mV/ o C,-0.59 mW/ o C, + 0.22 mA/ o C, and 0.065%/ o C, measured for free PV, and cell temperature of 39.0 o C. The maximum output power and conversion efficiency of the cell were shown to be reduced down to-0.53 mW/ o C and-0.058%/ o C, measured for the solar cell/thermoelectric hybrid system. Moreover, for solar cell/thermoelectric/passive heat sink hybrid system, their values were shown to be-0.52 mW/ o C and-0.057%/ o C. Finally, for the solar cell/thermoelectric/active heat sink hybrid system, the values reach-0.34 mW/ o C and 0.037 %/ o C, respectively.
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