“…Two paths are available to address this limitation in silicon based CMOS transistors: (1) modifications to conventional CMOS schemes such as tunnel FETs [5][6][7][8][9][10][11] and two-dimensional (2D) FETs [4,6,8,[12][13][14][15][16][17][18][19] that address these short channel effects, and (2) developing alternative logic schemes including non-volatile [14, and non-binary [20-25, 31, 42, 47-51] devices. The field of spintronics, where the electron spin is manipulated and used to convey information, has provided some of the most promising alternative device structures such as magnetic tunnel junctions (MTJs) using spin-transfer torque [26][27][28][29][30], spinorbit torque [32][33][34][35][36], magneto-electrics [31, 37-40, 43, 45, 46], and multiferroics [21,[23][24][25][48][49][50]; anti-ferromagnetic spin-orbit read (AFSOR) logic [20,31,38,39]; and several variations of spin FETs [20,…”