Compact model of short-channel MOSFETs considering quantum mechanical effects

Jayadeva, G. S.; DasGupta, Amitava

doi:10.1016/j.sse.2009.03.020

Cited by 13 publications

(11 citation statements)

References 28 publications

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“…However, computation of inversion charge density using the triangular potential well approximation requires iterations and is therefore not suitable for compact modeling. A new analytical model based on the triangular potential well approximation which results in a simple and closed-form expression for n inv as a function of V GS and other device parameters has been developed by Jayadeva and DasGupta [23]. In this model, further approximations are used to avoid iterations.…”

Section: Triangular Potential Well Approximationmentioning

confidence: 99%

“…These constants can be easily evaluated from device parameters using a simple procedure [24]. The inversion layer charge obtained from this model [23] is expressed in closed-form as…”

Section: Triangular Potential Well Approximationmentioning

confidence: 99%

“…(23) and (11), respectively. The results from the model are shown to match very well with experimental data.…”

Section: Increase In Threshold Voltagementioning

confidence: 99%

“…One of these is a threshold-based gate voltage shift model, while the second one is a surface potential-based model. In the threshold-based model, the drain current is calculated for a modified gate voltage Jayadeva and DasGupta [23] presented a threshold-based analytical model considering QM effects for the I-V characteristics of short-channel nMOSFETs valid for subthreshold, linear, and saturation region. The inversion layer charge in this model is obtained using eqn.…”

Section: Threshold-based Modelsmentioning

confidence: 99%

“…The results obtained from this model give very good match with MEDICI and experimental results for sub-100 nm devices. Figure 26 shows the comparison of I D -V D curves obtained from [23] with MEDICI-simulated data considering QM model. Figure 26 also shows the MEDICI-simulated curve without considering QM model.…”

Section: Threshold-based Modelsmentioning

confidence: 99%

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Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Srikantaiah

DasGupta

2012

IETE Tech Rev

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In this paper, the quantum mechanical (QM) effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed. As the device dimensions are scaled to the sub-100 nm range, QM effects affect the device properties, such as effective oxide thickness, inversion layer charge density and profile, threshold voltage, effective bandgap, gate capacitance, mobility, surface potential, subthreshold characteristics, drain current, and gate leakage current. The classical theory is no longer sufficient for accurate modeling of these device characteristics. In this paper, models which have incorporated QM effects to obtain the device characteristics are discussed and compared. The roles of QM effects in affecting some of the device properties are also presented. KeywordsBulk MOSFETs, Quantum mechanical effect, Review on compact modeling. ( ) , which is used to solve eqn. (1) by numerical methods. Only certain energy levels, denoted by E ij , satisfy the Schrödinger equation and correspond to the energy levels of the sub-bands. Here, i=L for the lower valley and i=H for the higher valley, while j=0, 1, 2, 3…, corresponds the sub-band number. The electron concentration n y IETE TECHNICAL REVIEW | VOL 29 | ISSUE 1 | JAN-FEB 2012 AUTHORS Jayadeva Gowrapura Srikantaiah received the B.E. degree in electronics and communication engineering from NMAM Institute of Technology, Nitte, in 1990, M.Tech degree in digital electronics and advanced communication from the Karnataka Regional Engineering College, Surathkal (Present NITK), in 1995, both were affiliated to Mangalore University, India and Ph.D degree from I.I.T. Madras in 2010. His Ph.D. dissertation was on analytical models incorporating quantum mechanical effects for short n-channel MOSFETS. He joined as a lecturer in NMAM Institute of Technology, Nitte, in 1990 and later as Assistant Professor at JNNCE Shimoga in 1998. He has been a Faculty member in the department of electronics and communication engineering, Nagarjuna College of Engineering and Technology, Bangalore, since September 2010 and is currently a Professor and Head. His research interests are modeling and simulation of bulk and SOI MOSFETs including quantum mechanical effects and low power VLSI design.

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Section: Triangular Potential Well Approximationmentioning

confidence: 99%

“…These constants can be easily evaluated from device parameters using a simple procedure [24]. The inversion layer charge obtained from this model [23] is expressed in closed-form as…”

Section: Triangular Potential Well Approximationmentioning

confidence: 99%

“…(23) and (11), respectively. The results from the model are shown to match very well with experimental data.…”

Section: Increase In Threshold Voltagementioning

confidence: 99%

Section: Threshold-based Modelsmentioning

confidence: 99%

Section: Threshold-based Modelsmentioning

confidence: 99%

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