Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application

Jana, Gargi; Sen, Dipanjan; Chanda, Manash

doi:10.1007/s00542-019-04688-6

Cited by 3 publications

(7 citation statements)

References 16 publications

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“…In the proposed model, the Gram‐Schmidt orthogonalization method has been used to make a large and significant speed‐up in the computational procedure of the model. It will be demonstrated that the proposed model approximates the analytical model in Reference 6 at a much shorter time with the desired accuracy.…”

Section: Introductionmentioning

confidence: 89%

“…1,2 Recently, a new type of DG-MOSFETs have been introduced that do not have a junction, and they are referred to as Junctionless DG-MOSFETs (JL-DG-MOSFET). [3][4][5][6] JL-DG-MOSFETs have the same structure of double-gate MOSFETs, but the transistor's body is doped through a channel between source and drain, as shown in Figure 1. This doped structure has special advantages from the manufacturing process point of view and also improves the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

“…Other advantages of DG‐MOSFETs include higher transconductance and better control of charge carriers in the channel 1,2 . Recently, a new type of DG‐MOSFETs have been introduced that do not have a junction, and they are referred to as Junctionless DG‐MOSFETs (JL‐DG‐MOSFET) 3‐6 . JL‐DG‐MOSFETs have the same structure of double‐gate MOSFETs, but the transistor's body is doped through a channel between source and drain, as shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, V T 0 is defined as

V_{T 0} = V_{italicFB 0} + V_{C} - \frac{{qN}_{sub} t_{si}}{2 C_{ox}} - \frac{{qN}_{sub} {t^{2}}_{si}}{8 C_{ox}}

where V FB 0 , V C and t si are the flat‐band voltages for the undamaged device, the central voltage, and the silicon thickness, respectively. However, the problem with analytical models, including Reference 6, is that the DIBL effect is still present in them, and therefore, the threshold voltage must be calculated as a function of the drain voltage, frequently at each time. This issue results in increasing the computational time overhead and reducing the design efficiency, especially in integrated circuits with a large number of transistors.…”

Section: Introductionmentioning

confidence: 99%

“…This method can significantly increase the efficiency and speed of the simulation of the circuits. The proposed Multiple Input Single Output (MISO) model is based on parameters of the analytical model of Reference 6. In the proposed model, the Gram‐Schmidt orthogonalization method has been used to make a large and significant speed‐up in the computational procedure of the model.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A nonlinear feed‐forward memory‐less model to fast prediction of threshold voltage in junction‐less double‐gate MOSFETs

Annabestani

Nasserian

Hasanzadeh

et al. 2020

Int J Numerical Modelling

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Decreasing Drain-Induced-Barrier-Lowering (DIBL) is one of the nondesirable short-channel effects, causes the threshold voltage of the transistor to be reduced by increasing the drain voltage. DIBL makes it impossible for engineers to consider V T as a constant, and it is necessary to calculate V T as a function of the drain voltage. Therefore, to consider the DIBL effect in the design of ICs, a large computational burden is imposed on the system, which slows down the simulation process in circuit-level simulators. Accordingly, a Nonlinear Feed-Forward Memory-Less (NFFML) model using the Gram-Schmidt orthogonalization approach is proposed, which calculates the V T of the new generation of MOSFETs, that is, Junctionless Double-Gate MOSFETs (JL-DG-MOSFETs), with high precision and a significant speed-up in the computation of the model. It is shown that the proposed numerical method is 313 times faster than the state-of-the-art analytical model. The normalized MSE is 0.435% on average, showing that the proposed approach can be a fast and accurate candidate for replacing the analytical modeling.

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Section: Introductionmentioning

confidence: 89%