Compact model for organic thin-film transistor with Gaussian density of states

Wang, Long; Lu, Nianduan; Li, Ling; Ji, Zhuoyu; Banerjee, Writam; Liu, Ming

doi:10.1063/1.4918622

Cited by 12 publications

(8 citation statements)

References 17 publications

(14 reference statements)

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“…Figure 12 shows the measured characteristics from pentacene transistors and the calculated current–voltage characteristics of OTFT. The model agrees well with the experimental results in both the linear and saturation regions [ 83 ].…”

Section: Surface-potential-based Compact Modelssupporting

confidence: 86%

“…We also verified our proposed model by comparing it to measurements of OTFTs with channel lengths from 25 µm to 5 µm ( W = 1000 µm), as shown in Figure 13 [ 83 ]. The extracted λ values are 0.55 and 0.27 for L = 5 μm and L = 10 μm, respectively.…”

Section: Surface-potential-based Compact Modelsmentioning

confidence: 74%

“…Figure 11 a shows the comparison between the surface potential calculated using the Boltzmann distribution and Fermi–Dirac distribution functions under different channel voltages, respectively [ 83 ]. One can see that a good agreement is observed.…”

Section: Surface-potential-based Compact Modelsmentioning

confidence: 99%

“…Similar errors of model accuracy have also been found in the OTFT compact models. Figure 18 shows a comparison of

characteristics based on the surface potential and the generic model, respectively [ 24 , 83 ]. For the surface-potential-based model in Figure 18 a, the accuracy is good in all regions, but for the generic model in Figure 18 b the errors increase with the gate voltage increasing.…”

Section: Comparison Of Various Compact Modelsmentioning

confidence: 99%

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A Review for Compact Model of Thin-Film Transistors (TFTs)

Jiang

et al. 2018

Micromachines

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Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

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Section: Surface-potential-based Compact Modelssupporting

confidence: 86%

Section: Surface-potential-based Compact Modelsmentioning

confidence: 74%

Section: Surface-potential-based Compact Modelsmentioning

confidence: 99%

“…Similar errors of model accuracy have also been found in the OTFT compact models. Figure 18 shows a comparison of

Section: Comparison Of Various Compact Modelsmentioning

confidence: 99%

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A Review for Compact Model of Thin-Film Transistors (TFTs)

Jiang

et al. 2018

Micromachines

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“…Hence, it is very important to take into account these effects in the development of a compact model that has to be used to design circuits that employs short channel OTFTs. Most of the OTFT models already proposed do not explicitly account for contact effects [21], [22], [23], [24] or do it in a phenomenological way [25]. A quite small number of compact models that accounts for non-ohmic source and drain contacts have already been proposed [26], [27].…”

Section: DC Model Of the Devicementioning

confidence: 99%

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

Valletta

Demirkol

Maira

et al. 2016

IEEE Trans. Nanotechnology

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This work introduces a compact DC model developed for Organic Thin Film Transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the Gradual Channel Approximation (GCA) that takes into account the contact effects, occurring at non-ohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-component setup based on two OTFTs connected into an inverter configuration. The experimental tests were based on OTFTs that use small molecules in binder matrix as an active layer. The experimental data on the fabricated devices have been found in good agreement with SPICE simulation results, paving the way to the use of the model and the device for the design of OTFT-based integrated circuits.

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Double exponential density of states and modified charge carrier transport in organic semiconductors

et al. 2022

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This paper discusses an approach to use an approximated charge carrier density for organic thin-film transistor (OTFT) using a double exponential density of states. Traditionally the literature has been published using a single exponential density of states and Gaussian density of states but this paper deals with using a double exponential density of states in the Fermi Integral to evaluate the charge carrier density for the OTFT. There are two exponential density of states related to the Tail region and Deep region and various parameters associated with it. The distribution of localized trap states between the highest and lowest orbital is expressed as a density of states. There are two states deep states and tail states. Tail states are better described by the Gaussian function, while Deep states are better described by the Exponential density of states. So, if we require that the two regions be defined by a single function then the function should be a sum of the two, the exponential and the Gaussian to accurately describe the complete region. The double exponential density of states is considered to evaluate and approximate the Fermi Integral using various Mathematical Methods, so that the error is lower for various parameters.

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Compact model for organic thin-film transistor with Gaussian density of states

Cited by 12 publications

References 17 publications

A Review for Compact Model of Thin-Film Transistors (TFTs)

A Review for Compact Model of Thin-Film Transistors (TFTs)

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

Double exponential density of states and modified charge carrier transport in organic semiconductors

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