A Review for Compact Model of Thin-Film Transistors (TFTs)

Lu, Nianduan; Jiang, Wenfeng; Wu, Quantan; Geng, Di; Li, Ling; Liu, Ming

doi:10.3390/mi9110599

Cited by 44 publications

(27 citation statements)

References 91 publications

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“…One is hopping transport in the ELR method, and the other is the transport from band-like to hopping in the SD method as temperature increases. [20][21][22] Thus, the extracted method is important for analyzing the transport mechanism. Typically, the transport mechanism is based on the dependence of mobility on temperature, which is associated with threshold, as in Equation (3).…”

Section: Resultsmentioning

confidence: 99%

Comparative study on extraction methods of threshold voltage for thin‐film transistors

et al. 2019

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In this work, we proposed three methods on extracting threshold voltage of ploy‐silicon thin‐film transistors, such as, extrapolation of the linear region, transconductance linear extrapolation, and second derivation. Based on these different methods, one can extract various values of threshold voltages, as well as their temperature dependence. In room temperature, the second derivation method is the most appropriate for thin‐film transistors. More remarkably, the different methods show the different temperature dependence of mobility, corresponding to different charge transport mechanisms. That is, hopping dominates the transport mechanism for extrapolation of the linear region method, while it will occur to transform from band‐like to hopping mechanism for the second derivative method.

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Section: Resultsmentioning

confidence: 99%

Comparative study on extraction methods of threshold voltage for thin‐film transistors

et al. 2019

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“…Metal-oxide semiconductors have received considerable attention due to their relevance in thin-film transistor (TFTs) technologies [1,2]. In addition, their low-temperature process ( 200 ∘ C), transparency, high stability, structural uniformity and compatibility with large-area substrates make them very attractive for commercial applications [3].…”

Section: Introductionmentioning

confidence: 99%

Modeling of the Density of States in Field-Effect Zinc Oxide Semiconductor Devices Fabricated by Ultrasonic Spray Pyrolysis on Plastic Substrates

Obregon

Barba

Dominguez

2021

The 1st International Conference on Micromachines and Applications

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In this work, using a physically based simulator, the modeling of the density of states (DOS) through the fitting of the electrical characteristics in field-effect devices is presented. The transfer characteristic of zinc oxide (ZnO) thin-film transistors is simulated, along with the capacitance–voltage curves in metal-insulator-semiconductor capacitors using ZnO as an active layer. The ZnO semiconductor devices were fabricated by high-frequency ultrasonic spray pyrolysis on polyethylene terephthalate plastic substrates. Different aspects were considered and discussed to model the device interfaces.

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“…Therefore, there is an immediate need to improve the performance of TFTs. TFT is a special type of transistor which has a supporting substrate over which a layer of dielectric, semiconductor and contacts are deposited [3]. The material used as channel layer are A-Si, Poly Si, Semiconducting Metal Oxides (SMO's) etc.…”

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confidence: 99%

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

Jain

Singh²,

Sharma

et al. 2021

Preprint

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This work reports RF and analog performance analysis of an amorphous Indium Tin Zinc Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT like drain current, drain conductance, output resistance, transconductance, transconductance generation factor, early voltage, intrinsic gain, capacitances, cut off frequency, maximum frequency of oscillation, transconductance frequency product, gain frequency product, gain bandwidth product and gain transconductance frequency product have been closely examined. The device is further analyzed to investigate the impact of variation in physical parameters viz. dielectric material, dielectric thickness (𝐷𝑡 ) and temperature (T) on the RF/Analog performance. Use of high-k dielectric material in the simulated structure has resulted in low subthreshold slope (SS) of 0.62 V/decade, On voltage (𝑉𝑜𝑛) of (- 0.29) V, 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 ratio of ~ 109 , intrinsic gain (𝐴𝑉) of 104.5 dB and gain frequency product (GFP) of 1.86 GHz. The best results for dielectric thickness variation are offered for dielectric thickness of 150 nm with SS of 0.22 V/decade, 𝑉𝑜𝑛 of (-0.26 V), 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 of ~ 1010 , (𝐴𝑉) of 175.69 dB and GFP of 2.39 GHz. For device reliability and stability study, temperature analysis has also been done. To demonstrate the circuit level implementation of the simulated structure, a resistive load inverter circuit is simulated and analyzed for different variations (high-k, 𝐷𝑡 and T). The results obtained are promising to meet the current display industry requirement. It has also been concluded that TFT with high-k material or thinner dielectric at T=300 K provides best performance.

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A Review for Compact Model of Thin-Film Transistors (TFTs)

Cited by 44 publications

References 91 publications

Comparative study on extraction methods of threshold voltage for thin‐film transistors

Comparative study on extraction methods of threshold voltage for thin‐film transistors

Modeling of the Density of States in Field-Effect Zinc Oxide Semiconductor Devices Fabricated by Ultrasonic Spray Pyrolysis on Plastic Substrates

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

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