Modeling of the Density of States in Field-Effect Zinc Oxide Semiconductor Devices Fabricated by Ultrasonic Spray Pyrolysis on Plastic Substrates

Abstract

In this work, using a physically based simulator, the modeling of the density of states (DOS) through the fitting of the electrical characteristics in field-effect devices is presented. The transfer characteristic of zinc oxide (ZnO) thin-film transistors is simulated, along with the capacitance–voltage curves in metal-insulator-semiconductor capacitors using ZnO as an active layer. The ZnO semiconductor devices were fabricated by high-frequency ultrasonic spray pyrolysis on polyethylene terephthalate plastic substrates. Different aspects were considered and discussed to model the device interfaces.

Hydrothermal Synthesis of Zinc Oxide Nanoparticles Using Different Chemical Reaction Stimulation Methods and Their Influence on Process Kinetics

“…Zinc oxide nanoparticles are used as a catalyst in organic synthesis. In the electronics industry, ZnONPs are used to produce semiconductors [ 1 , 2 , 3 , 4 , 5 ], varistors [ 6 , 7 , 8 , 9 , 10 , 11 , 12 ], sensors [ 13 , 14 , 15 , 16 , 17 , 18 ] and transistors [ 19 , 20 , 21 , 22 , 23 , 24 ]. Due to the wide energy gap, 3.37 eV zinc oxide is used as a luminescent material in optoelectronics [ 25 , 26 , 27 , 28 , 29 , 30 ].…”