Compact methods for measuring stress birefringence

Hagen, Nathan; Sabatke, Derek; Scholl, James F.; Jansson, Peter; Chen, Weinong Wayne; Dereniak, Eustace L.; Sass, David T.

doi:10.1117/12.509424

Cited by 8 publications

(5 citation statements)

References 5 publications

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“…Polarization sensitive photodetectors, which are optoelectronic devices sensitive to the polarization of the incoming light, have a strong impact in many different branches of science and technology like astronomy, [1] quality assessment in food and mechanical industry, [2] ellipsometry. [3] Natural evolution endowed certain animals and insects with eyes equipped with monolithic polarization sensitive photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction

Niu

Frisenda

Flores

et al. 2018

Advanced Optical Materials

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polarization-sensitive photodetectors and polarimeters. [6] Up to now, however, most of the reported works on photodetectors based on 2D semiconductors are focused on transition metal dichalcogenides or other chalcogenides with marked in-plane isotropic properties and thus the built-up photodetectors are insensitive to polarized light. [3a,7] The amount of works exploring the use of dichroic 2D semiconductors is still scarce and they are mostly limited to devices with low detectivity values or with a limited cut-off wavelength. [8] Recently, Island et al. have fabricated photodetectors using TiS 3 , [7c] a member of the trichalcogenide family that presents remarkable quasi-1D electrical and optical properties with an anisotropy larger than the one of black phosphorus. [9] However, this strong in-plane anisotropy has not been exploited yet to fabricate polarization-sensitive photodetectors.Here, we demonstrate the fabrication of monolithic polarizationsensitive photodetectors based on TiS 3 . The devices are built up by staking a TiS 3 ribbon onto p-type silicon, thus forming a p-n junction based photodiode geometry which allows one to operate the device either in photovoltaic (PV) mode, without applying any external bias, or in photoconductive (PC) mode, with a positive or negative bias applied to the device. In PV mode upon illumination, the built-in electric field present at the interface between TiS 3 and Si separates the photogenerated charge carriers yielding to photocurrent even under unbiased condition. The fabricated devices show broadband photoresponse from 405 to 1050 nm and a strong dependence of their photoresponse on the polarization The capability to detect the polarization state of light is crucial in many daylife applications and scientific disciplines. Novel anisotropic 2D materials such as TiS 3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS 3 /Si p-n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.

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Section: Introductionmentioning

confidence: 99%

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction

Niu

Frisenda

Flores

et al. 2018

Advanced Optical Materials

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“…Polarimetry has applications in many disciplines, such as ellipsometry [1], remote sensing [2], atmospheric sensing [3], target identification [4], manufacturing and quality control [5], telecommunications [6], and biomedical imaging [7]. Current methods of imaging polarimetry, such as channeled (CH) [8] and division of focal plane (DoF) polarimeters [9], usually limit spatial resolution, while others, like division of aperture (DoA) or division of amplitude polarimeters (DoAM), have higher complexity and size [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic coincident linear polarimetry using stacked organic photovoltaics

et al. 2016

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Polarimetry has widespread applications within atmospheric sensing, telecommunications, biomedical imaging, and target detection. Several existing methods of imaging polarimetry trade off the sensor's spatial resolution for polarimetric resolution, and often have some form of spatial registration error. To mitigate these issues, we have developed a system using oriented polymer-based organic photovoltaics (OPVs) that can preferentially absorb linearly polarized light. Additionally, the OPV cells can be made semitransparent, enabling multiple detectors to be cascaded along the same optical axis. Since each device performs a partial polarization measurement of the same incident beam, high temporal resolution is maintained with the potential for inherent spatial registration. In this paper, a Mueller matrix model of the stacked OPV design is provided. Based on this model, a calibration technique is developed and presented. This calibration technique and model are validated with experimental data, taken with a cascaded three cell OPV Stokes polarimeter, capable of measuring incident linear polarization states. Our results indicate polarization measurement error of 1.2% RMS and an average absolute radiometric accuracy of 2.2% for the demonstrated polarimeter.

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“…As a kind of photoelectric device sensitive to incident light polarization, polarization-sensitive photodetector has a strong influence in navigation, astronomy [109], quality evaluation of mechanical industry [110], and many other scientific and technological fields. Most of the photodetectors use the photoelectric effect inside the material, in which the absorption of photons causes the carrier to be excited from the valence band to the conduction band, and then the output current.…”

Section: Polarization Photodetector Based On Graphenementioning

confidence: 99%

Review of Polarization Optical Devices Based on Graphene Materials

Zhang

Xing

2020

IJMS

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Graphene has received extensive scholarly attention for its extraordinary optical, electrical, and physicochemical properties, as well as its compatibility with silicon-based semiconductor processes. As a unique two-dimensional atomic crystal material, graphene has excellent mechanical properties, ultra-high carrier mobility, ultra-wide optical response spectrum, and strong polarization dependence effect, which make it have great potential in new optical and polarization devices. A series of new optical devices that are based on graphene have been developed, showing excellent performance and broad application prospects. In this paper, the recent research progress of polarizers, sensors, modulators, and detectors that are based on the polarization characteristics of graphene is reviewed. In particular, the polarization dependence effect and broadband absorption enhancement of graphene under total reflection structure are emphasized, which enhance the interaction between graphene and light and then provide a new direction for research of graphene polarization devices.

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Compact methods for measuring stress birefringence

Cited by 8 publications

References 5 publications

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction

Intrinsic coincident linear polarimetry using stacked organic photovoltaics

Review of Polarization Optical Devices Based on Graphene Materials

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Compact methods for measuring stress birefringence

Cited by 8 publications

References 5 publications

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n Junction

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS3/Si p–n Junction

Intrinsic coincident linear polarimetry using stacked organic photovoltaics

Review of Polarization Optical Devices Based on Graphene Materials

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Product

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Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction

Polarization‐Sensitive and Broadband Photodetection Based on a Mixed‐Dimensionality TiS₃/Si p–n Junction